Band gaps of the dilute quaternary alloys GaNxAs1-x-yBiy and Ga1-yInyNxAs1-x

Tixier, S.; Webster, S. E.; Young, E. C.; Tiedje, T.; Francoeur, S.; Mascarenhas, A.; Wei, P.; Schiettekatte, F.
March 2005
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p112113
Academic Journal
We report strong band gap photoluminescence at room temperature in dilute quaternary GaNxAs1-x-yBiy alloys (x<1.6%,y<2.6%) grown by molecular beam epitaxy. The band gap of the alloy can be approximated by the band gap of GaAs minus the reduction in gap associated with the effects of N and Bi alloying individually. A one-parameter method for fitting the composition dependence of the band gaps of dilute quaternary semiconductor alloys is proposed which is in excellent agreement with data for Ga1-yInyNxAs1-x.


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