Strain-engineered ferromagnetic In1-xMnxAs films with in-plane easy axis

Liu, X.; Lim, W. L.; Ge, Z.; Shen, S.; Dobrowolska, M.; Furdyna, J. K.; Wojtowicz, T.; Yu, K. M.; Walukiewicz, W.
March 2005
Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p112512
Academic Journal
Ferromagnetic In1-xMnxAs semiconductor films (x=0.12) were grown by low-temperature molecular beam epitaxy on In1-yAlyAs-AlSb-GaAs hybrid substrates. The built-in compressive strain induced by the In1-yAlyAs buffer leads to an in-plane easy axis of magnetization. Detailed studies of magnetic anisotropy by ferromagnetic resonance and by direct magnetization measurements unambiguously show the existence of a uniaxial anisotropy in the layer plane, similar to that observed in compressively strained GaMnAs. This suggests that the difference between [110] and [&110macr;] directions is general for III-Mn-As systems.


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