Modification of the electric conduction at the pentacene/SiO2 interface by surface termination of SiO2

Yagi, Iwao; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu
March 2005
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103502
Academic Journal
A surface treatment method has been developed for the SiO2/Si substrate to control the electrical properties of pentacene thin-film transistors (TFTs). The surface treatment is performed by spin-coating 1,1,1,3,3,3-hexamethyldisilazane liquid, resulting in a drastic improvement of the off current although the surface treatment never shows a pronounced morphological change in the pentacene channel in comparison with the one on the nontreated substrate. The off current improvement directly enhances the transistor performance especially in the TFTs with a few monolayers channel thickness. The off current suppression could be caused by the reduction of the interfacial floating charge trapped at the pentacene/SiO2 interface.


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