Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric

Panzer, Matthew J.; Newman, Christopher R.; Frisbie, C. Daniel
March 2005
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103503
Academic Journal
Large operating voltages are often required to switch organic field-effect transistors (OFETs) on and off because commonly used gate dielectric layers provide low capacitive coupling between the gate electrode and the semiconductor. We present here a pentacene OFET gated by a solution-deposited polymer electrolyte film in which the current was modulated over four orders of magnitude using gate voltages less than 2 V. A subthreshold slope of 180 mV per decade of current was observed during transistor turn on at a source-drain bias of -1 V; the estimated dielectric layer specific capacitance was 5 μF/cm2. Sweep rate-dependent hysteresis may be attributed to a combination of ion migration and charge carrier trapping effects. Strategies to improve switching speeds for polymer electrolyte-gated OFETs are also discussed.


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