Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy

Qi, Y. D.; Liang, H.; Wang, D.; Lu, Z. D.; Tang, W.; Lau, K. M.
March 2005
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p101903
Academic Journal
InGaN/GaN multiple-quantum-well (MQW) blue and green-light-emitting diodes (LEDs) were grown on sapphire substrates using metalorganic vapor phase epitaxy. High-resolution transmission microscopy shows that a much larger density of stacking faults exist in the quantum-well region of the blue LEDs than in the green LEDs. In the green LEDs, the blueshift in the electroluminescence (EL) emission energy at larger driving currents is more prominent than in the blue LEDs, which is explained by different strength of quantum-confined Stark effect as a result of different piezoelectric field intensity by different scales of strain relaxation in the blue and green MQWs. The steady broadening of the EL emission energy linewidth on the higher energy side with the increase of the driving current was observed in both blue and green LEDs, which is attributed to the band filling effect.


Related Articles

  • Red, Green and 1.54 μm Emissions from an Er-doped n-ZnO/p-Si Light Emitting Diode. Harako, S.; Yokoyama, S.; Ide, K.; Komuro, S.; Zhao, X. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1427 

    Er-doped ZnO/Si hetero-junctions have been formed by laser ablating an Er-contained ZnO target onto p-Si (100) substrates. Light emitting diodes fabricated by using these samples exhibit bright green, red and 1.54 μm emissions under reverse current injections at room temperature. It is...

  • Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as an electron blocking layer. Hagen, J. A.; Li, W.; Steckl, A. J.; Grote, J. G. // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p171109 

    Enhanced electroluminescent efficiency using a deoxyribonucleic acid (DNA) complex as an electron blocking (EB) material has been demonstrated in both green- and blue-emitting organic light-emitting diodes (OLEDs). The resulting so-called BioLEDs showed a maximum luminous efficiency of 8.2 and...

  • Trends and Tradeoffs in Powering LED Luminaires. Weir, Bernie // LED Journal;Nov/Dec2008, Vol. 3 Issue 6, p8 

    The article deals with trends and factors to consider in power schemes for light emitting diode luminaires. LED arrangement is mentioned as an important step to consider to achieve the required output level and achieve uniform brightness. Regulatory considerations related to voltage output level...

  • Setting the Mood in Solid State Lighting. Keene, Mike // ECN: Electronic Component News;Sep2009, Vol. 53 Issue 10, p25 

    The article offers information on the light emitting diodes (LED)-based solid state lighting (SSL) systems. It is stated that the SSL systems have the capability to tune the chromaticity of light emitted from a luminaire. It is also stated that the systems can be configured to emit white light...

  • ILLUMINATING EVIDENCE.  // Electronics World;Jun2008, Vol. 114 Issue 1866, p20 

    The article analyses the challenges for the user to overcome before completing a design with power LEDs, particularly when it comes to determining the relationship between drive current, thermal management and effective lifetime. It describes the design benefits of using power LED to replace...

  • Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces. Chung Chieh Yang; Chia Feng Lin; Chun Min Lin; Cheng Chien Chang; Kuei Ting Chen; Jui Fen Chien; Chung Ying Chang // Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203103 

    InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm...

  • Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes. Lundin, W. V.; Zavarin, E. E.; Sinitsyn, M. A.; Sakharov, A. V.; Usov, S. O.; Nikolaev, A. E.; Davydov, D. V.; Cherkashin, N. A.; Tsatsulnikov, A. F. // Semiconductors;Jan2010, Vol. 44 Issue 1, p123 

    Effect of pressure in the reactor in the case of growth of active regions in the InGaN/GaN light-emitting diodes by the method of vapor-phase epitaxy from metalorganic compounds on their electroluminescent and structural properties has been studied. It is shown that, as pressure is increased,...

  • High peak luminance of molecularly dye-doped organic light-emitting diodes under intense voltage pulses. Wei, B.; Ichikawa, M.; Furukawa, K.; Koyama, T.; Taniguchi, Y. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p044506 

    The performance and efficiency of molecularly doped organic light-emitting devices (OLEDs) using voltage pulses have been investigated. The maximum current density and peak luminance have been found to depend on the pulse duration and device size, which was attributed to the heat effect in...

  • High-efficiency stacked white organic light-emitting diodes. Lee, Tae-Woo; Noh, Taeyong; Choi, Byoung-Ki; Kim, Myeong-Suk; Shin, Dong Woo; Kido, Junji // Applied Physics Letters;1/28/2008, Vol. 92 Issue 4, p043301 

    We report efficient tandem white organic light-emitting diodes (WOLEDs) by using bathocuproine:Cs2CO3/MoO3 as an effective interconnecting layer. We utilized two primary colors of sky blue and orange fluorescent emitters to obtain efficient white electroluminescence. Although single WOLEDs using...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics