Mechanisms of B deactivation control by F co-implantation

Cowern, N. E. B.; Colombeau, B.; Benson, J.; Smith, A. J.; Lerch, W.; Paul, S.; Graf, T.; Cristiano, F.; Hebras, X.; Bolze, D.
March 2005
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p101905
Academic Journal
Thermal annealing after preamorphization and solid-phase epitaxy of ultrashallow B implants leads to deactivation and diffusion driven by interstitials released from end-of-range defects. F inhibits these processes by forming small clusters that trap interstitials. A competing B–F interaction causes deactivation when F and B profiles overlap. Both pathways suppress B transient enhanced diffusion.


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