Growth and characterization of single quantum dots emitting at 1300 nm

Alloing, B.; Zinoni, C.; Zwiller, V.; Li, L. H.; Monat, C.; Gobet, M.; Buchs, G.; Fiore, A.; Pelucchi, E.; Kapon, E.
March 2005
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p101908
Academic Journal
We have optimized the molecular-beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than 0.002 ML/s, to reduce the density to 2 dots/μm2 and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, InAs/GaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography.


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