Extremely low surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures

Wang, C. A.; Shiau, D. A.; Donetsky, D.; Anikeev, S.; Belenky, G.; Luryi, S.
March 2005
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p101910
Academic Journal
Low surface recombination velocity is critical to the performance of minority carrier devices. Minority carrier lifetime in double heterostructures (DHs) of 0.53-eV p-GaInAsSb confined with 1.0-eV p-AlGaAsSb, and grown lattice-matched to GaSb, was measured by time-resolved photoluminescence. The structures were designed to be dominated by the heterointerface while minimizing the contribution of photon recycling to minority carrier lifetime. Surface recombination velocity as low as 30 cm/s for DHs was achieved. This value is over an order of magnitude lower than that reported in previous studies.


Related Articles

  • Magnetotransport in C-doped AlGaAs heterostructures. Girbic, B.; Ellenberger, C.; Ihn, T.; Ensslin, K.; Reuter, D.; Wieck, A. D. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2277 

    High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm2/V s are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly resolved Shubnikov-de Haas oscillations at low magnetic...

  • Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors... Lin, Yo-Sheng; Lu, Shey-Shi // Journal of Applied Physics;2/15/1999, Vol. 85 Issue 4, p2197 

    Presents information on a study of the lattice-matched and strained doped-channel field-effect transistors to investigate the influence of the indium content in the channel on device properties. Crystal growth and device technology; Direct current characteristics; Microwave characteristics;...

  • Strong self- and cross-phase modulation effects in chromium-doped KTiOPO[sub 4] crystals. Jurdik, E.; Petukhov, A. V.; Anema, A.; van Etteger, A.; Rasing, Th. // Journal of Applied Physics;8/15/2001, Vol. 90 Issue 4, p1698 

    The presence of chromium impurities in the crystal matrix of chromium-doped KTiOPO is shown to be at the origin of a strong cubic optical nonlinearity of this material. As a result, a pronounced self-phase modulation of a Gaussian laser beam at 532 nm is observed in the far field as a...

  • Controlled p-type impurity doping of HgTe-CdTe superlattices during molecular-beam-epitaxial growth. Peterman, D. J.; Wroge, M. L.; Morris, B. J.; Leopold, D. J.; Broerman, J. G. // Journal of Applied Physics;2/15/1989, Vol. 65 Issue 4, p1550 

    Presents a study of the molecular-beam-epitaxial growth of silver-doped HgTe-CdTe superlattices on CdTe/GaAs heterostructures. Correlation of the silver diffusion with pyramidal defect density for many superlattices; Determination of Hall carrier concentrations and mobilities; Second-ion mass...

  • Electron transport across a Gaussian superlattice. Gomez, I.; Dominguez-Adame, F. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3916 

    Studies the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Proposition for a model of band-pass filter; Study of the negative differential resistance.

  • Anomalous transport in PbTe doping superlattices. Jantsch, W.; Bauer, G.; Pichler, P.; Clemens, H. // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p738 

    The Hall coefficient of p-PbTe doping superlattices changes sign twice between 100 and 300 K. This effect is reported here for the first time and explained in terms of the temperature dependences of the static dielectric constant and the electron and hole mobilities. Below 140 K, persistent...

  • Depth profile and lattice location analysis of Sb atoms in Si/Sb(delta-doped)/Si(001) structures... Kobayashi, T.; McConville, C.F.; Dorenbos, G.; Iwaki, M.; Aono, M. // Applied Physics Letters;2/1/1999, Vol. 74 Issue 5, p673 

    Studies the depth profile and lattice location of antimony (Sb) atoms in Si/Sb(delta-doped)/Si(001) structures using medium-energy ion scattering spectroscopy. Diffusion of Sb atoms into the Si capping layer at concentrations higher than the solubility limit in a Si crystal; Decrease of Sb...

  • Doping in a superlattice structure: Improved hole activation in wide-gap II-VI materials. Suemune, Ikuo // Journal of Applied Physics;3/1/1990, Vol. 67 Issue 5, p2364 

    Focuses on a study which proposed doping of acceptors in a superlattice (SL) structure to improve the activation ratio. Fundamental scheme and analyses; Discussion of the impurity levels in an SL structure and the possibility of an impurity band for high doping concentrations; Transport...

  • Sb doping and electrical characteristics of ultrathin SinGem superlattices. Presting, H.; Kibbel, H.; Kasper, E.; Jorke, H. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5653 

    Presents a study which investigated tin (Sb) doping and the electrical characteristics of ultrathin Si[subn]Ge[subm] superlattices. Factor which made possible the growth of superlattices consisting of layers; Background on spontaneous Sb incorporation in Si/Ge superlattices; Details of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics