TITLE

Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes

AUTHOR(S)
Yang, Hyuck Soo; Han, Sang Youn; Baik, K. H.; Pearton, S. J.; Ren, F.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p102104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaN multiquantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 420 to 505 nm were exposed to either Ar or H2 inductively coupled plasmas as a function of both rf chuck power (controlling incident ion energy) and source power (controlling ion flux). The forward turn-on voltage is increased by both types of plasma exposure and is a function of both the incident ion energy and flux. The reverse bias current in the LEDs is much larger in the case of H2 plasma exposure, indicating that preferential loss of nitrogen leads to increased surface leakage. The current transport in the LEDs is dominated by generation-recombination (ideality factor ∼2) both before and after the plasma exposures.
ACCESSION #
16581507

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics