TITLE

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

AUTHOR(S)
Reed, M. J.; Arkun, F. E.; Berkman, E. A.; Elmasry, N. A.; Zavada, J.; Luen, M. O.; Reed, M. L.; Bedair, S. M.
PUB. DATE
March 2005
SOURCE
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p102504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaMnN dilute magnetic semiconductor samples, prepared by metalorganic chemical vapor deposition, are shown to exhibit ferromagnetism or even paramagnetism depending upon the type and concentration of extrinsic impurity present in the film. In addition, GaMnN deposited using growth parameters normally yielding a nonferromagnetic film becomes strongly ferromagnetic with the addition of magnesium, an acceptor dopant. Based upon these observations, it seems that ferromagnetism in this material system depends on the relative position of the Mn energy band and the Fermi level within the GaMnN band gap. Only when the Fermi level closely coincides with the Mn-energy level is ferromagnetism achieved. By actively engineering the Fermi energy to be within or near the Mn energy band, room temperature ferromagnetism is realized.
ACCESSION #
16581503

 

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