Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications

Lee, Jong Jin; Harada, Yoshinao; Pyun, Jung Woo; Kwong, Dim-Lee
March 2005
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103505
Academic Journal
This letter presents the formation of nickel nanocrystal on HfO2 high-k dielectric and its application to the nonvolatile memory devices. The effects of the initial nickel layer thickness and annealing temperature on nickel nanocrystal formation are investigated. The n-metal-oxide-semiconductor field-effect transistor with nickel nanocrystals and HfO2 tunneling dielectrics is fabricated and its programming, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.


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