Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As/GaAs heterostructures

Dong, X. Y.; Adelmann, C.; Xie, J. Q.; Palmstrøm, C. J.; Lou, X.; Strand, J.; Crowell, P. A.; Barnes, J.-P.; Petford-Long, A. K.
March 2005
Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p102107
Academic Journal
Electrical spin injection from the Heusler alloy Co2MnGe into a p-i-n Al0.1Ga0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2MnGe decays more rapidly with increasing temperature.


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