TITLE

Suspended single-electron transistors: Fabrication and measurement

AUTHOR(S)
Paraoanu, G. S.; Halvari, A. M.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p093101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated suspended aluminum single-electron transistors in which the island is not in contact with the substrate. This type of device displays well-defined I-V and dI/dV-V features typical for high-quality standard superconducting single-electron transistors.
ACCESSION #
16581457

 

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