TITLE

Near- and mid-infrared detection using GaAs/InxGa1-xAs/InyGa1-yAs multiple step quantum wells

AUTHOR(S)
Touse, M. P.; Karunasiri, G.; Lantz, K. R.; Li, H.; Mei, T.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p093501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A dual-band multiple-quantum-well infrared photodetector capable of simultaneously detecting wavelengths near 0.9 μm and 10 μm has been fabricated using GaAs/InGaAs step quantum wells. The detection of the near (0.82–0.95 μm)- and mid (9–11 μm)-infrared wavelength bands was achieved using interband and intersubband transitions. The measured peak responsivities of the near- and mid-infrared bands were 0.4 A/W and 1 A/W, respectively, at 0.8 V bias across the device. The broken symmetry of the step quantum well allows transitions from the ground states of heavy and light holes to the first-excited electron state allowing the photoexcited carriers to be efficiently collected. The estimated values of the detectivities for near- and mid-infrared bands at 40 K and 0.8 V bias are approximately 4.5×109 cm(Hz)1/2/W and 1.1×1010 cm(Hz)1/2/W, respectively.
ACCESSION #
16581445

 

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