TITLE

Performance improvement of polycrystalline diamond ultraviolet photodetectors by room-temperature plasma treatment

AUTHOR(S)
Wang, S. G.; Sellin, P. J.; Lohstroh, A.; Qing Zhang
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p093503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Enhancement of ultraviolet (UV) photoresponsivity in chemical-vapor-deposited (CVD) diamond photodetectors was observed by posttreatment in a plasma of oxygen and carbon tetrafluoride at room temperature. This room-temperature plasma posttreatment was found to be an efficient process in suppressing the extrinsic photoresponse of CVD diamond UV photodetectors in the visible region. Nearly four orders of magnitude difference in the photoresponsivity between the UV and visible light regions were obtained. The results of photoluminescence mapping and Raman spectra indicate that this performance improvement may have resulted from the effective removal of the sp2-bonded carbon impurities and passivation of the silicon-vacancy defects in the diamond.
ACCESSION #
16581442

 

Related Articles

  • Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si. Feng, Z. C.; Mascarenhas, A. J.; Choyke, W. J.; Powell, J. A. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3176 

    Analyzes the chemical vapor deposited cubic silicon-carbon films using the Raman scattering method. Details on the experiment; Film thickness dependence of the Raman spectra; Breaking of selection rules; Variation of Raman signal strength with the incident light intensity.

  • Selective deposition of in situ doped polycrystalline silicon by rapid thermal processing chemical vapor deposition. Hsieh, T. Y.; Chun, H. G.; Kwong, D. L. // Applied Physics Letters;12/4/1989, Vol. 55 Issue 23, p2408 

    Selective polycrystalline silicon was successfully deposited and in situ doped wih arsenic for the first time by rapid thermal processing chemical vapor deposition (RTPCVD). The growth kinetics of SiH2Cl2/AsH3/H2 gas system have been studied by examining the dependence of growth rate on...

  • Preparation of three-dimensionally oriented polycrystalline Si film. Di, G.Q.; Lin, H. // Applied Physics Letters;1/1/1996, Vol. 68 Issue 1, p69 

    Investigates the crystal structure and morphology of polycrystalline silicon films. Use of plasma-enhanced chemical vapor deposition method; Effect of the presence of grain boundaries in the active region of poly-silicon thin-film transistors on the carrier mobility of silicon; Characterization...

  • Determining the crystalline degree of silicon nanoclusters/SiO2 multilayers by Raman scattering. Hernàndez, S.; López-Vidrier, J.; López-Conesa, L.; Hiller, D.; Gutsch, S.; Ibáñez, J.; Estradé, S.; Peiró, F.; Zacharias, M.; Garrido, B. // Journal of Applied Physics;2014, Vol. 115 Issue 20, p203504-1 

    We use Raman scattering to investigate the size distribution, built-in strains and the crystalline degree of Si-nanoclusters (Si-nc) in high-quality Si-rich oxynitride/SiO2 multilayered samples obtained by plasma enhanced chemical vapor deposition and subsequent annealing at 1150 °C. An...

  • Raman scattering in carbon-doped InAs. Najmi, S.; Zhang, X.; Chen, X. K.; Thewalt, M. L. W.; Watkins, S. P. // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p041908 

    Carbon-doped InAs samples grown by organometallic vapor phase epitaxy were studied by Raman spectroscopy. A local vibrational mode (LVM) identified at 527 cm-1 correlated with carbon concentration from secondary ion mass spectroscopy measurements, and based on LVM trends in other III-Vs, appears...

  • Raman characterization of aligned carbon nanotubes produced by thermal decomposition of.... Wenzhi Li; Hao Zhang // Applied Physics Letters;5/19/1997, Vol. 70 Issue 20, p2684 

    Investigates the Raman characterization of aligned carbon nanotubes produced by chemical vapor deposition. Raman spectra up to the fourth order of the aligned charged carbon nanotubes (CCNT); Effects of the appearance of a strong D band in carbon nanotubes produced by arc discharge; Information...

  • Effects of temperature and electrical stress on the performance of thin-film transistors fabricated from undoped low-pressure chemical vapor deposited polycrystalline silicon. Dimitriadis, C. A.; Coxon, P. A. // Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p620 

    The stability of thin-film transistors (TFTs) fabricated from undoped low-pressure chemical vapor deposited polycrystalline silicon under stress conditions (dc voltage and temperature) is investigated. It is demonstrated that the Si-SiO2 interface morphology is critical for the TFT device...

  • Transparent chemical vapor deposited beta-SiC. Goela, J.S.; Burns, L.E.; Taylor, R.L. // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p131 

    Examines the fabrication of transparent polycrystalline beta-silicon carbide (SiC) by the pyrolysis of methyltrichlorosilane in a hot wall chemical vapor deposition reactor. List of SiC properties; Decrease in the attenuation coefficient of transparent SiC; Suitability of the high purity of the...

  • Thermal conductivity of heavily doped low-pressure chemical vapor deposited polycrystalline silicon films. Tai, Y. C.; Mastrangelo, C. H.; Muller, R. S. // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1442 

    Presents a study which measured the thermal conductivity of heavily doped low-pressure chemical vapor deposited polycrystalline silicon films. Fabrication process for the bridges; Theoretical considerations; Experimental details.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics