Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

Hyundoek Yang; Yunik Son; Sungkwon Baek; Hyunsang Hwang; Hajin Lim; Hyung-Seok Jung
February 2005
Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p092107
Academic Journal
The electrical characteristics were evaluated for the metal-oxide-semiconductor (MOS) devices with Ti and Pt gates on the atomic-layer-deposited (ALD) HfO2. The equivalent oxide thickness (EOT) of the Ti gate is shown to be nearly the same as that of the Pt gate, which means that a negligible chemical reaction occurs between the gate and dielectric. The values of the effective metal work function ([uppercase_phi_synonym]m,eff), extracted from the conventional relations of flatband voltage versus EOT, were ∼4.2 eV for Ti and ∼5.4 eV for Pt, respectively. However, somewhat higher values of [uppercase_phi_synonym]m,eff were extracted by considering the existence of an interfacial layer and the high negative charge at an interface between HfO2 and interfacial layer. The exact values of [uppercase_phi_synonym]m,eff were ∼4.37 eV for Ti and ∼5.51 eV for Pt, respectively. Therefore, the Ti gate is compatible with ALD-HfO2 and can be a candidate for n-type MOS devices.


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