TITLE

Current-induced metastable resistive state in epitaxial thin films of La1-xCaxMnO3 (x=0.2, 0.3)

AUTHOR(S)
Gao, J.; Hu, F. X.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p092504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of a transport dc current on electric resistivity has been investigated in epitaxial thin films of La1-xCaxMnO3 (x=0.2, 0.3). A most prominent finding is the appearance of a remarkable resistive peak at temperatures well below the Curie temperature Tc. Such a resistive peak is developed when the dc current over a critical value was applied in a temperature cycling from 300 to 10 K. The resistance peak turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak. Such a current-induced state with high resistivity is metastable compared to the pristine state. The stability of the induced state has been also studied.
ACCESSION #
16581430

 

Related Articles

  • Phase-field modeling of stress-induced surface instabilities in heteroepitaxial thin films. Seol, D. J.; Hu, S. Y.; Liu, Z. K.; Chen, L. Q.; Kim, S. G.; Oh, K. H. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p044910 

    A phase-field model for investigating the surface morphological evolution of a film is developed, taking into account the surface energies of film and substrate, the interfacial energy between the film and substrate, and the elastic energy associated with the lattice mismatch between the film...

  • Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy. Wassner, Thomas A.; Laumer, Bernhard; Maier, Stefan; Laufer, Andreas; Meyer, Bruno K.; Stutzmann, Martin; Eickhoff, Martin // Journal of Applied Physics;Jan2009, Vol. 105 Issue 2, pN.PAG 

    Wurtzite Zn1-xMgxO thin films with Mg contents between x=0 and x=0.37 were grown on c-plane sapphire substrates by plasma assisted molecular beam epitaxy using a MgO/ZnMgO buffer layer. The a-lattice parameter is independent from the Mg concentration, whereas the c-lattice parameter decreases...

  • Growth and thermal stability of Ga(1-X)CrXN films. Thaler, G. T.; Frazier, R. M.; Abernathy, C. R.; Pearton, S. J. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131901 

    GaCrN thin films were synthesized using gas-source molecular beam epitaxy. No evidence of second-phase formation was observed by powder x-ray diffraction. Magnetic characterization performed using a superconducting quantum interference device magnetometer showed evidence of ferromagnetic...

  • Unstable mixing regions in II-VI quaternary solid solutions. Deibuk, V. G.; Dremlyuzhenko, S. G.; Ostapov, S. E. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2005, Vol. 8 Issue 4, p1 

    The miscibility gaps and critical temperatures of the spinodal decompositions of the quaternary semiconducting epitaxial thin films CdMnHgTe and ZnMnHgTe have been calculated. Fitting the spinodal isotherms calculated from the free energy of mixing being based on application of the delta-lattice...

  • Kinetically controlled thin-film growth of layered β- and γ-NaxCoO2 cobaltate. Son, J. Y.; Kim, Bog G.; Cho, J. H. // Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221918 

    We report growth characteristics of epitaxial β-Na0.6CoO2 and γ-Na0.7CoO2 thin films on (001) sapphire substrates grown by pulsed-laser deposition. Reduction of the deposition rate could change the structure of the NaxCoO2 thin film from a β phase with an island growth mode to a γ...

  • The influence of the growth rate on the preferred orientation of magnetron-sputtered Ti–Al–N thin films studied by in situ x-ray diffraction. Beckers, M.; Schell, N.; Martins, R. M. S.; Mücklich, A.; Möller, W. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p044901 

    In situ x-ray diffraction has been used to characterize the growth and microstructure of wear protective Ti1-xAlxN thin films. The films were deposited onto oxidized Si(100) wafers in a sputter chamber mounted onto a six-circle goniometer located at a synchrotron-radiation beam line. Off-plane...

  • Structural characterization of a-plane Zn1-xCdxO (0<=x<=0.085) thin films grown by metal-organic vapor phase epitaxy. Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.; Lorenz, M.; Benndorf, G.; Heitsch, S.; Spemann, D.; Grundmann, M. // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p023514 

    Zn1-xCdxO(1120) films have been grown on (0112) sapphire (r-plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by...

  • Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy. Byungha Shin; Leonard, John P.; McCamy, James W.; Aziz, Michael J. // Applied Physics Letters;10/31/2005, Vol. 87 Issue 18, p181916 

    Using a dual molecular-beam epitaxy (MBE)–pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that...

  • Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O3. Víllora, Encarnación G.; Shimamura, Kiyoshi; Kitamura, Kenji; Aoki, Kazuo // Applied Physics Letters;1/16/2006, Vol. 88 Issue 3, p031105 

    Epitaxial growth of β-Ga2O3 thin films by the rf-plasma-assisted molecular-beam epitaxy technique is demonstrated. Growth on (1 0 0) β-Ga2O3 substrates leads to very smooth epilayers, while (2 0 1) and (1 0 0) oriented β-Ga2O3 films are obtained on (0 0 1) sapphire and (1 0 0) MgO...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics