TITLE

High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm

AUTHOR(S)
Wei, Y.; Hood, A.; Yau, H.; Yazdanpanah, V.; Razeghi, M.; Tidrow, M. Z.; Nathan, V.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p091109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the most recent result in the area of type-II InAs/GaSb superlattice photodiodes that have a cutoff wavelength around 7 μm at 77 K. Superlattice with a period of 40 Å lattice matched to GaSb was realized using GaxIn1-x type interface engineering technique. Compared with significantly longer period superlattices, we have reduced the dark current density under reverse bias dramatically. For a 3 μm thick structure, using sulfide-based passivation, the dark current density reached 2.6×10-5 A/cm2 at -3 V reverse bias at 77 K. At this temperature the photodiodes have R0A of 9300 Ω cm2 and a thermally limited zero bias detectivity of 1×1012 cm Hz1/2/W. The 90%–10% cutoff energy width was only 16.5 meV. The devices did not show significant dark current change at 77 K after three months storage in the atmosphere.
ACCESSION #
16581419

 

Related Articles

  • Interface band gap engineering in InAsSb photodiodes. Carras, M.; Reverchon, J. L.; Marre, G.; Renard, C.; Vinter, B.; Marcadet, X.; Berger, V. // Applied Physics Letters;9/5/2005, Vol. 87 Issue 10, p102103 

    The optimization of an InAs0.91Sb0.09 based infrared detector has been performed. The importance of the interfaces between the active region and the contacts in generation recombination phenomena is demonstrated. The two sides of the active region are optimized independently through...

  • On the performance and surface passivation of type II InAs/GaSb superlattice photodiodes for the very-long-wavelength infrared. Hood, Andrew; Razeghi, Manijeh; Aifer, Edward H.; Brown, Gail J. // Applied Physics Letters;10/10/2005, Vol. 87 Issue 15, p151113 

    We demonstrate very-long-wavelength infrared type II InAs/GaSb superlattice photodiodes with a cutoff wavelength (λc,50%) of 17 μm. We observed a zero-bias, peak Johnson noise-limited detectivity of 7.63×109 cm Hz1/2/W at 77 K with a 90%–10% cutoff width of 17 meV, and quantum...

  • Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures. Olesberg, J. T.; Flatté, Michael E.; Hasenberg, T. C.; Grein, C. H. // Journal of Applied Physics;3/15/2001, Vol. 89 Issue 6, p3283 

    Despite recent progress in electronic structure engineering of type-II materials for mid-infrared lasers, suppression of Auger recombination at room temperature has been limited. We present an active region design, consisting of AlAsSb/InAs/GaInSb/InAs/AlAsSb wells separated by an InAs/AlGaSb...

  • Passivation of InAs/(GaIn)Sb short-period superlattice photodiodes with 10 μm cutoff wavelength by epitaxial overgrowth with AlxGa1-xAsySb1-y. Rehm, Robert; Walther, Martin; Fuchs, Frank; Schmitz, Johannes; Fleissner, Joachim // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p173501 

    An approach for the passivation of photodiodes based on compounds of the InAs/GaSb/AlSb materials family is presented. The passivation is realized by the overgrowth of patterned mesa devices with a quaternary AlxGa1-xAsySb1-y layer, lattice matched to the GaSb substrate. Proof of concept is...

  • Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes. Hood, Andrew; Hoffman, Darin; Yajun Wei; Fuchs, Frank; Razeghi, Manijeh // Applied Physics Letters;1/30/2006, Vol. 88 Issue 5, p052112 

    The residual carrier backgrounds of binary type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths around 5 μm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 1015...

  • Forward tunneling current in HgCdTe photodiodes. Sarusi, G.; Zemel, A.; Sher, Ariel; Eger, D. // Journal of Applied Physics;10/1/1994, Vol. 76 Issue 7, p4420 

    Presents a study which investigated the current voltage characteristics of narrow-gap Hg[sub1-x]Cd[subx]Te photodiodes. Mechanism that determines the dark current at forward and at low reverse bias; Transitions that take place between trapping levels; Measurement of the current-voltage...

  • Photodiodes for a 1.5—4.8μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures. Stoyanov, N. D.; Mikhaılova, M. P.; Andreıchuk, O. V.; Moiseev, K. D.; Andreev, I. A.; Afrailov, M. A.; Yakovlev, Yu. P. // Semiconductors;Apr2001, Vol. 35 Issue 4, p453 

    Long-wavelength photodiodes based on LPE-grown type-II heterostructures in lattice-matched GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb systems were fabricated and studied. Band energy diagram engineering for heterostructures with wide- and narrow-gap layers allows the photodiode parameters...

  • Spin-valve photodiode. Appelbaum, Ian; Monsma, D. J.; Russell, K. J.; Narayanamurti, V.; Marcus, C. M. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3737 

    An optical spin-valve effect is observed using sub-bandgap internal photoemission to generate and collect hot electrons in magnetic multilayers grown on n-Si. Approximately 1.5%–2.5% magnetoresistance is observed in this two-terminal device at low temperature, and this effect is reduced...

  • GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays. Chul-Ho Lee; Jinkyoung Yoo; Young Joon Hong; Jeonghui Cho; Yong-Jin Kim; Seong-Ran Jeon; Jong Hyeob Baek; Gyu-Chul Yi // Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213101 

    We studied the fabrication and electroluminescent (EL) characteristics of GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n-GaN,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics