TITLE

Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric

AUTHOR(S)
Shen, C.; Li, M. F.; Yu, H. Y.; Wang, X. P.; Yeo, Y.-C.; Chan, D. S. H.; Kwong, D.-L.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p093510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we report on a physical model to explain the frequency dependence of dynamic charge trapping in metal-oxide-semiconductor (MOS) transistors with ultrathin HfO2 gate dielectrics. For transistors operating in a complementary MOS inverter circuit with a given gate voltage amplitude, we observed a reduction of charge trapping when the stress frequency is increased. This can be explained by the traps in the high-k HfO2 dielectric have the property of negative-U centers. One trap can capture two electrons sequentially, and the trap energy is reduced as a result of lattice relaxation. Results of calculation using the model show excellent agreement with all experiment data.
ACCESSION #
16581391

 

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