TITLE

Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

AUTHOR(S)
Shiyang Zhu; Nakajima, Anri; Ohashi, Takuo; Miyake, Hideharu
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p083501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By stressing metal-oxide-semiconductor field-effect transistors with ultrathin silicon dioxide or oxynitride gate dielectrics under square wave form voltage at the MHz region, an abnormal enhancement of interface trap generation in the midchannel region has been observed at some special frequencies. A hypothesis, including self-accelerating interface trap generation originated from the positive feedback of a charge pumping current to be contributed by the stress-induced near-interface oxide traps and a resonant tunneling via the near interface oxide trap states at those frequencies, is proposed to explain the observed phenomenon.
ACCESSION #
16581386

 

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