TITLE

Effects of epitaxial lift-off on interface recombination and laser cooling in GaInP/GaAs heterostructures

AUTHOR(S)
Imangholi, Babak; Hasselbeck, Michael P.; Sheik-Bahae, Mansoor; Epstein, Richard I.; Kurtz, Sarah
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence of GaAs passivated with GaInP is studied over the temperature range 7–450 K. Different photocarrier recombination mechanisms are identified as the temperature changes. An interface recombination velocity of less than 0.6 cm/s is measured at 300 K. Lift-off processing inhibits but does not preclude laser cooling of GaAs.
ACCESSION #
16581374

 

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