Effects of epitaxial lift-off on interface recombination and laser cooling in GaInP/GaAs heterostructures

Imangholi, Babak; Hasselbeck, Michael P.; Sheik-Bahae, Mansoor; Epstein, Richard I.; Kurtz, Sarah
February 2005
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081104
Academic Journal
Photoluminescence of GaAs passivated with GaInP is studied over the temperature range 7–450 K. Different photocarrier recombination mechanisms are identified as the temperature changes. An interface recombination velocity of less than 0.6 cm/s is measured at 300 K. Lift-off processing inhibits but does not preclude laser cooling of GaAs.


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