TITLE

Ballistic hole magnetic microscopy

AUTHOR(S)
Haq, E.; Banerjee, T.; Siekman, M. H.; Lodder, J. C.; Jansen, R.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p082502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A technique to study nanoscale spin transport of holes is presented: ballistic hole magnetic microscopy. The tip of a scanning tunneling microscope is used to inject hot electrons into a ferromagnetic heterostructure, where inelastic decay creates a distribution of electron-hole pairs. Spin-dependent transmission of the excited hot holes into an underlying p-type semiconductor collector induces a hole current in the valence band of the semiconductor, with magnetocurrent values up to 180%. The spin-filtering of holes is used to obtain local hysteresis loops and magnetic imaging with spatial resolution better than 30 nm.
ACCESSION #
16581373

 

Related Articles

  • Electrical effects of spin density wave quantization and magnetic domain walls in chromium. Kummamuru, Ravi K.; Yeong-Ah Soh // Nature;4/17/2008, Vol. 452 Issue 7189, p859 

    The role of magnetic domains (and the walls between domains) in determining the electrical properties of ferromagnetic materials has been investigated in great detail for many years, not least because control over domains offers a means of manipulating electron spin to control charge transport...

  • Rapidly solidified amorphous nanowires. Chiriac, H.; Corodeanu, S.; Lostun, M.; Stoian, G.; Ababei, G.; Óvári, T.-A. // Journal of Applied Physics;Mar2011, Vol. 109 Issue 6, p063902 

    Results on the preparation and magnetic characterization of rapidly solidified amorphous glass-coated nanowires are reported. Rapidly solidified nanowires have been investigated by means of bulk and surface hysteresis loop measurements, scanning electron microscopy, and ferromagnetic resonance....

  • Micromagnetic simulation of spin-transfer switching in a full-Heusler Co2FeAl0.5Si0.5 alloy spin-valve nanopillar. Huang, H. B.; Ma, X. Q.; Liu, Z. H.; Meng, F. Y.; Xiao, Z. H.; Wu, P. P.; Shi, S. Q.; Chen, L. Q. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 3, p033913 

    We investigated the spin-transfer switching in a full-Heusler Co2FeAl0.5Si0.5 alloy spin-valve nanopillar through micromagnetic simulation. A two-step switching hysteresis loop due to the fourfold in-plane magnetocrystalline anisotropy of Co2FeAl0.5Si0.5 layers was obtained. The simulation...

  • Direct evidences of filamentary resistive switching in Pt/Nb-doped SrTiO3 junctions. Yang, M.; Ren, L. Z.; Wang, Y. J.; Yu, F. M.; Meng, M.; Zhou, W. Q.; Wu, S. X.; Li, S. W. // Journal of Applied Physics;2014, Vol. 115 Issue 13, p134505-1 

    The first concerned question on the fundamental physics of the resistive switching (RS) effect in metal/Nb-doped SrTiO3 junctions is whether the RS does take place at the whole interface or at some local regions of the interface. Even though several investigations provide the clues of the...

  • Micromagnetic study of the intrinsic loop squareness S[sup *] in perpendicular media. Zhou, Hong // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p7843 

    Micromagnetic simulations have been performed to deshear the remanent hysteresis loops in perpendicular media. Results demonstrate that the intrinsic loop squareness S* increases with increasing the intergranular exchange couplings and with decreasing the intergranular magnetostatic...

  • Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals. Eun Ji Kim; Lingquan Wang; Asbeck, Peter M.; Saraswat, Krishna C.; McIntyre, Paul C. // Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p012906 

    Charge-trapping defects in Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and their passivation by hydrogen are investigated in samples with abrupt oxide/III-V interfaces. Tunneling of electrons into defect states (border traps) in the atomic layer deposited Al2O3 near the...

  • Remote phonon scattering in field-effect transistors with a high κ insulating layer. Laikhtman, B.; Solomon, P. M. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p014501 

    In this paper a remote phonon scattering of channel electrons in a field-effect transistor (FET) with a high dielectric constant (κ) insulator in between the gate and the channel is studied theoretically. The spectrum of phonons confined in the high κ layer and its modification by the gate...

  • Modeling of Suppressed Shot Noise in Stress-Induced Leakage Currents. Iannaccone, Giuseppe // AIP Conference Proceedings;2005, Vol. 780 Issue 1, p203 

    We review our approach to model transport and noise in MOS capacitors in the Stress-Induced Leakage Current regime. We show that a model including Pauli and Coulomb interaction among electrons can be implemented in a numerical solver of the coupled Poisson and Schroedinger equations in...

  • Thermal hysteresis in the magnetization of the layered III-VI diluted magnetic semiconductor In1-xMnxSe. Pekarek, T. M.; Ranger, L. H.; Miotkowski, I.; Ramdas, A. K. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08D511 

    Magnetic properties of single-crystalline In1-xMnxSe (x=0.10) have been measured. A prominent thermal hysteresis in the magnetization is observed between 90 and 290 K. The magnetization is reversible (deviating by only ∼0.8%) from 400 down to ∼120 K along the upper branch of the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics