Type I-type II transition in InGaAs–GaNAs heterostructures

Schlichenmaier, C.; Grüning, H.; Thränhardt, A.; Klar, P. J.; Kunert, B.; Volz, K.; Stolz, W.; Heimbrodt, W.; Meier, T.; Koch, S. W.; Hader, J.; Moloney, J. V.
February 2005
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081903
Academic Journal
Optical interband transitions in a series of In0.23Ga0.77As–GaNxAs1-x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5) eV is extracted for this heterostructure system.


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