TITLE

Determination of electron escape depth in ultrathin silicon oxide

AUTHOR(S)
Nohira, H.; Okamoto, H.; Azuma, K.; Nakata, Y.; Ikenaga, E.; Kobayashi, K.; Takata, Y.; Shin, S.; Hattori, T.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081911
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using the high-brilliance synchrotron radiation at SPring-8, we determined the electron escape depths in approximately 1-nm-thick low-temperature oxide layers, which were formed on Si(100) at 300 °C using three kinds of atomic oxygen and that in approximately 1-nm-thick thermally grown oxide layer formed in 1 Torr dry oxygen at 900 °C by measuring angle-resolved Si 2p photoelectron spectra at the photon energy of 1050 eV. The results indicated that the electron escape depths in the three kinds of low-temperature oxide layers were 18%–24% smaller than that in the thermally grown oxide layer. Furthermore, the electron escape depth in the thermally grown oxide layer, whose thickness was close to that of the structural transition layer, was 7% smaller than that in bulk SiO2.
ACCESSION #
16581360

 

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