Comparison of the properties of GaN grown on complex Si-based structures

Zhou, S. Q.; Vantomme, A.; Zhang, B. S.; Yang, H.; Wu, M. F.
February 2005
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081912
Academic Journal
The article states that due to the potential integration of microelectronics and optoelectronics, the growth of Gallium nitride (GaN) on silicon (Si) substrates attracts a lot of attention. A major challenge in the growth of GaN on Si is the large mismatch of the in-plane thermal expansion coefficient, which leads to cracking in the GaN layer when cooling the heterostructure from the growth temperature to room temperature. The authors in this article report on the growth and properties of epitaxial GaN layers on Si compound using metalorganic chemical vapor deposition.


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