Organic field-effect transistors with single and double pentacene layers

Suyong Jung; Zhen Yao
February 2005
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p083505
Academic Journal
We report the characterization of field-effect transistors fabricated within individual grains of single and double pentacene layers grown on silicon oxide. Field-effect mobilities are found to increase with increasing gate voltage and exhibit a thermally activated form for the temperature dependence. These characteristics can be explained by the multiple trapping and release model. The mobilities of double-layer devices are one order of magnitude higher than those of single-layer devices. Possible origins of the traps are discussed. The geometry of these ultrathin devices makes them suitable for sensing applications.


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