TITLE

Creation of second-order nonlinearity and quasi-phase-matched second-harmonic generation in Ge-implanted fused silica planar waveguide

AUTHOR(S)
Huai-Yi Chen; Chun-Lin Lin; Yu-Hsien Yang; Shiuh Chao; Huan Niu; Chih T';sung Shih
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A planar waveguide was formed in fused silica plate by implantation of 5-MeV Ge2+ ions to a dose of 1015 ions/cm2. Thermal poling created larger second-order nonlinearity in the waveguide than in blank fused silica plate. The nonlinearity could be erased by 266 nm ultraviolet exposure. Periodical nonlinearity distribution in the waveguide was implemented by periodical UV exposure. The first-order quasi-phase-matched second-harmonic generation from 1064 nm fundamental mode to 532 nm fundamental mode was achieved in the waveguide. The d33:d31 ratio was found to be 3.2:1, in favor of the built-in electric field model for Ge-implanted silica waveguide.
ACCESSION #
16581346

 

Related Articles

  • Charge centers induced in thermal SiO[sub 2] films by high electric field stress at 80 K. Fujieda, Shinji // Journal of Applied Physics;3/15/2001, Vol. 89 Issue 6, p3337 

    Charge centers induced in wet and dry SiO[sub 2] films by high electric field stress [Fowler-Nordheim (FN) stress] at 80 K were characterized. The gate current of wet oxides was found to increase steeply during the FN-stress application at 80 K. In contrast, the gate current of dry oxides...

  • Electric Field Affects the Charge State in Ion-Implanted Si—SiO[sub 2] Structures. Baraban, A. P.; Miloglyadova, L. V.; Ter-Nersesyants, V. I. // Technical Physics Letters;Feb2001, Vol. 27 Issue 2, p129 

    Using the method of depth profiling based on the measurement of high-frequency voltage-capacitance characteristics in an electrolyte-insulator-semiconductor structure in combination with the insulator layer etching, it was found that Ar ion implantation into the oxide film of a Si-SiO[sub 2]...

  • Laser produced streams of Ge ions accelerated and optimized in the electric fields for implantation into SiO2 substrates. Rosinski, M.; Giuffrida, L.; Parys, P.; Gasior, P.; Fazio, E.; Mezzasalma, A. M.; Torrisi, L.; Ando, L.; Wolowski, J. // Review of Scientific Instruments;Feb2012, Vol. 83 Issue 2, p02B305 

    Ge crystals were prepared by means of laser-induced ion implantation technique. A Nd:YAG pulsed laser (repetition rate: 10 Hz; pulse duration: 3.5 ns; pulse energy: ∼0.5 J) was used both as an ion source and to carry out the ablation processes. The optimization of the laser-generated ion...

  • Nano particles of iron oxides in SiO glass prepared by ion implantation. Nomura, K.; Reuther, H. // Journal of Radioanalytical & Nuclear Chemistry;Jan2011, Vol. 287 Issue 1, p341 

    Quartz (SiO) glass was implanted with 5 × 10Fe ions/cm at a substrate temperature of 500 °C, and annealed at temperatures between 700 and 950 °C. The implanted and annealed plates were characterized by conversion electron Mössbauer spectroscopy (CEMS), and measured by a Kerr effect...

  • Influence of an external electric field on the recovery of stabilized zirconium dioxide under helium ion bombardment. Gorshkov, O. N.; Novikov, V. A.; Kasatkin, A. P. // Technical Physics Letters;Jul99, Vol. 25 Issue 7, p580 

    It is shown that the application of an external electric field during helium ion bombardment of yttrium-stabilized zirconium dioxide single crystals may have a substantial influence on the processes accompanying the radiation-stimulated recovery of yttrium-stabilized zirconium dioxide: its...

  • Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC. Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C. // Journal of Applied Physics;2016, Vol. 119 Issue 2, p025307-1 

    Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and...

  • The effect of salt on ion adsorption on a SiOx alignment film and reduced conductivity of a liquid crystal host. Huang, Yi; Bhowmik, Achintya; Bos, Philip J. // Journal of Applied Physics;Jan2012, Vol. 111 Issue 2, p024501 

    It is shown that the addition of salt to liquid crystal cells, using a SiOx alignment layer, can actually reduce the ion concentration. This seeming contradiction may be explained by the ability of salt to complex with water and to aid the drying of the liquid crystal material. The results show...

  • Molecule to solid state nanostructures. Athar, Taimur // Journal of Materials Science & Engineering;2009, Vol. 3 Issue 8, p18 

    This work is focused on the synthesis of bimetallic oxide nanopowder prepared via non-hydrolytic sol-gel process. Bimetallic oxide was characterized by using various analytical techniques. Elemental analysis showed consistency with the formulation. From XRD, SEM and TEM studies, it is concluded...

  • Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films. Seol, Kwang Soo; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Takiyama, Makoto; Hama, Yoshimasa // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6444 

    Examines the effect of implanted ion species on the decay kinetics of photoluminescence (PL) in thermal silicon dioxide films. Relation of the change in the decay constant and in the PL intensity with the mass and the dose of the implanted ions; Factor that affects the electrical properties of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics