Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution

Matsui, T.; Taketani, E.; Tsuda, H.; Fujimura, N.; Morii, K.
February 2005
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p082902
Academic Journal
We report on the synthesis of the magnetoelectric BaFe1-xZrxO3-δ (x=0.5 and 0.7) single-crystalline films whose magnetic and leakage properties have been greatly improved. The films were found to be excellent insulators, up to the leakage current density of about 1.1×10-5 A/cm2 at the bias electric field of 150 kV/cm for the x=0.7 sample. This is much less than 10-2 of that for the BaFeO3-δ single-crystalline film, which means that the leakage current properties have been distinctly improved by zirconium substitution. As for the magnetic properties, the hysteresis loops measured at 5 K for the x=0.7 samples apparently show huge saturation magnetization of 0.98 μB/Fe ion, in contrast to 0.09 μB/Fe ion for the x=0.5 sample. This implies that the magnetic ordering for the x=0.7 sample has been greatly enhanced, possibly due to the ferromagnetic spin alignment of Fe ions.


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