Growth, structure, and properties of all-epitaxial ferroelectric (Bi,La)4Ti3O12/Pb(Zr0.4Ti0.6)O3/(Bi,La)4Ti3O12 trilayered thin films on SrRuO3-covered SrTiO3(011) substrates

Dinghua Bao; Sung Kyun Lee; Xinhua Zhu; Marin Alexe; Dietrich Hesse
February 2005
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p082906
Academic Journal
All-epitaxial (Bi , La)4Ti3O12(BLT) /Ph(Zr, Ti)O3(PZT)/(Bi , La)4Ti3O12 trilayered ferroelectric thin films were prepared on SrRuO3 (SRO)-covered SrTiO3(011) substrates by pulsed-laser deposition. Epitaxial relationships were identified to be BLT(118) PZT(011) SrTiO3(011), and BLT[1&bar;1&bar;0] PZT[100] SrTiO3[100]. Atomic force microscopy observation of the surface showed that the upper BLT layer is composed of rod-like grains. Cross-sectional transmission electron microscopy investigations revealed ferroelectric 90° domains in the PZT layer, as well as a rather smooth morphology of the BLTIPZT interfaces. Remanent polarization and coercive field of the trilayered films were 28.1 μC/cm² and 33.7 kV/cm, respectively. The thin films showed a high fatigue resistance at least up to 1010 switching pulse cycles. Obviously, a trilayered structure combines the advantages of PZT and BLT, indicating that the all-epitaxial BLTIPZT/BLT trilayered structure is a promising material combination for ferroclectric memory device applications.


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