Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

Weidemann, O.; Monroy, E.; Hahn, E.; Stutzmann, M.; Eickhoff, M.
February 2005
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p083507
Academic Journal
The effect of thermal oxidation on the electric properties of Pt Schottky contacts on Si-doped GaN films grown by plasma-assisted molecular-beam epitaxy was investigated. Significant improvement of the electrical contact characteristics mirrored by an increase of the effective Schottky barrier height and a decrease of the reverse bias leakage current by up to four orders of magnitude was observed for an oxidation temperature of 700 °C. Comparative analysis by atomic force microscopy and transmission electron microscopy revealed preferential oxidation of threading dislocations causing selective passivation of leakage current paths as the origin of the observed device improvement.


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