Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface

Duffy, R.; Venezia, V. C.; Loo, J.; Hopstaken, M. J. P.; Verheijen, M. A.; van Berkum, J. G. M.; Maas, G. C. J.; Tamminga, Y.; Dao, T.; Demeurisse, C.
February 2005
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081917
Academic Journal
We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at 700 °C after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germanium implant, and also after a self-amorphizing phosphorus implant. This phenomenon is driven by the presence and dissolution of silicon interstitial defects. The greater the distance between the defect band and the high-concentration phosphorus profile, the less the preferential diffusion for a fixed anneal time. The overall result of this effect is a phosphorus profile that is significantly shallower and steeper than after implant.


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