TITLE

Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction

AUTHOR(S)
Liang, Y.; Curless, J.; McCready, D.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p082905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Band discontinuities and band bending at the epitaxial SrTiO3/GaAs(001) interface were investigated using x-ray and ultraviolet photoelectron spectroscopy. Results showed that the epitaxial SrTiO3/GaAs(001) formed a type II heterojunction with conduction and valence band offsets being 0.6 and 2.5 eV, respectively, for both n- and p-GaAs(001) substrates. The photoemission results further revealed that Fermi level was unpinned at the epitaxial SrTiO3/GaAs(001) interface.
ACCESSION #
16581314

 

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