Ferroelectric properties of wet-chemical patterned PbZr0.52Ti0.48O3 films

Ezhilvalavan, S.; Samper, Victor D.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p072901
Academic Journal
PbZr0.52Ti0.48O3 (PZT) films of thickness ∼1μm prepared by a sol-gel process were wet-chemically patterned using an economical and effective etch process. The etch recipe provided excellent etch control, minimized undercut, preserved the photoresist mask, and effectively removed the residues on the etched surfaces. A high etch rate (200 nm/min), high selectivity with respect to photoresist, and limited undercutting (1.5:1, lateral: thickness) were obtained. The patterned PZT films exhibited good ferroelectric properties in terms of larger saturation polarization, Pmax of ∼53 μC/cm2 at an applied field of 1 MV/cm, higher remnant polarization Pr of ∼30 μC/cm2 for a coercive field of ∼150 kV/cm, fatigue-free characteristics up to >=1010 switching cycles, and a low leakage current density of 10-6 A/cm2 at 200×105 kV/cm.


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