n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes

Nosho, Yosuke; Ohno, Yutaka; Kishimoto, Shigeru; Mizutani, Takashi
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p073105
Academic Journal
We have fabricated n-type carbon nanotube field effect transistors by choosing the contact metal. Single-walled carbon nanotubes were grown directly on a SiO2/Si substrate by chemical vapor deposition using patterned metal catalysts. Following the nanotube growth, Ca contacts with a small work function were formed by evaporating and lifting off the metal. The devices showed n-type transfer characteristics without any doping into the nanotube channel. In contrast, the devices with Pd contacts showed p-type conduction. These results can be explained by taking into account the work functions of the contact metals.


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