High-density self-assembled GaN nanoislands on SiC (0001) by molecular-beam epitaxy

Jeganathan, K.; Shimizu, M.; Okumura, H.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p073106
Academic Journal
We report the fabrication of self-assembled coherent GaN nanoislands on Ga-adsorbed [Square_Root]3×[Square_Root]3 R30° 6H–SiC(0001) surfaces via Stranski–Krastanov (SK) growth mode by molecular-beam epitaxy at 760 °C. The initial GaN deposition reveals a stable two-dimensional growth (2D) mode under Ga-rich growth conditions (Ga/N>1), as evidenced by the variation of in-plane misfit strain (Δa/a0). We show that above ∼2.2 monolayer (ML) surface coverage, the 2D layer spontaneously transformed into SK islands by the accommodation of elastic strain in the epitaxial lattice misfit under a vacuum. The SK islands density is found to be ∼4×1011 cm-2 and the mean height and diameter is 2±0.5 nm and 20±5 nm for 3.2 ML surface coverage, respectively.


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