TITLE

High-density self-assembled GaN nanoislands on SiC (0001) by molecular-beam epitaxy

AUTHOR(S)
Jeganathan, K.; Shimizu, M.; Okumura, H.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p073106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the fabrication of self-assembled coherent GaN nanoislands on Ga-adsorbed [Square_Root]3×[Square_Root]3 R30° 6H–SiC(0001) surfaces via Stranski–Krastanov (SK) growth mode by molecular-beam epitaxy at 760 °C. The initial GaN deposition reveals a stable two-dimensional growth (2D) mode under Ga-rich growth conditions (Ga/N>1), as evidenced by the variation of in-plane misfit strain (Δa/a0). We show that above ∼2.2 monolayer (ML) surface coverage, the 2D layer spontaneously transformed into SK islands by the accommodation of elastic strain in the epitaxial lattice misfit under a vacuum. The SK islands density is found to be ∼4×1011 cm-2 and the mean height and diameter is 2±0.5 nm and 20±5 nm for 3.2 ML surface coverage, respectively.
ACCESSION #
16581289

 

Related Articles

  • Real-time control of molecular beam epitaxy by optical-based flux monitoring. Chalmers, S.A.; Killeen, K.P. // Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3131 

    Presents molecular beam epitaxy control system based on aluminum and gallium atomic beam resonant absorption of hollow cathode lamp emission. Determination of instantaneous growth rate and layer thickness; Demonstration of the accuracy and flexibility of the system; Automatic detection and...

  • Properties of Si layers grown by molecular beam epitaxy at very low temperatures. Jorke, H.; Kibbel, H.; Schäffler, F.; Casel, A.; Herzog, H.-J.; Kasper, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p819 

    (100) silicon molecular beam epitaxy films with etch pit densities below 103 cm-2 and χmin values of 3.3–3.9% were grown at very low temperatures (Ts =250–350 °C). Although dopant activation is significantly below unity at n=1018 Sb atoms/cm3 Hall mobilities of homogeneously...

  • Isotope-Pure Silicon Layers Grown by MBE. Godisov, O. N.; Kaliteevsky, A. K.; Safronov, A. Yu.; Korolev, V. I.; Ber, B. Ya.; Davydov, V. Yu.; Denisov, D. V.; Kaliteevsky, M. A.; Kop�ev, P. S.; Kovarsky, A. P.; Ustinov, V. M.; Pohl, H.-J. // Semiconductors;Dec2002, Vol. 36 Issue 12, p1400 

    Molecular-beam epitaxy with a solid source was used to grow silicon layers enriched with [sup 28]Si and [sup 30]Si isotopes to 99.93 and 99.34%, respectively. Secondary-ion mass spectrometry and Raman scattering spectroscopy were applied to demonstrate the high isotopic purity and crystal...

  • Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate. Magidson, V.; Regelman, D. V.; Beserman, R.; Dettmer, K. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    Nominal Ge islands were grown by a molecular beam epitaxy technique on a Si(001) substrate. Island positions and shapes were measured by atomic force microscopy. Two types of islands with different sizes and shapes are present. The Si concentration distribution inside the islands was measured by...

  • Special Features of the Sublimational Molecular-Beam Epitaxy of Si and Its Potentialities for Growing Si:Er/Si Structures. Kuznetsov, V. P.; Rubtsova, R. A. // Semiconductors;May2000, Vol. 34 Issue 5, p502 

    The concentration of charge carriers and their Hall mobility in Si:Er/Si layers grown by sublimational molecular-beam epitaxy were investigated as functions of temperature in the range of 300-77 K. No electric activity of Er-containing luminescent centers was observed. The feasibility of precise...

  • Pattern formation and shadow instability in collimated energetic molecular beam growth of silicon. Roadman, S. E.; Levine, S. W. // Applied Physics Letters;1/4/1999, Vol. 74 Issue 1, p25 

    Studies pattern formation and shadow instability in collimated energetic molecular beam growth of silicon. Resulting thin-film surface topology; Observation of rough surface morphology; Thin films deposited at substrate temperatures.

  • 370 degrees C clean for Si molecular beam epitaxy using a HF dip. Eaglesham, D.J.; Higashi, G.S.; Cerullo, M. // Applied Physics Letters;8/5/1991, Vol. 59 Issue 6, p685 

    Demonstrates a low-temperature clean for Si molecular beam epitaxy. Low defect densities at 380 degree celsius; Occurrence of substrates transition from amorphous deposition to crystalline growth; Contamination levels at the substrate-epilayer interface to conventional chemical oxide desorption...

  • 5-THz bandwidth from a GaAs-on-silicon photoconductive receiver. Pedersen, J. Engholm; Keiding, S. Rud; So\rensen, C. B.; Lindelof, P. E.; Rühle, W. W.; Zhou, X. Q. // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p7022 

    Deals with a study which demonstrated that GaAs grown molecular beam epitaxy on silicon has ideal characteristics for terahertz (THz) receiver applications. Result of the lattice mismatch between silicon and GaAs; Use of THz pulses; Examples of the applications of THz pulses.

  • Influence of carbon incorporation on dopant surface segregation in molecular-beam epitaxial growth of silicon. Osten, H. J.; Lippert, G.; Liu, J. P.; Kru¨ger, D. // Applied Physics Letters;9/25/2000, Vol. 77 Issue 13 

    We describe the effect of carbon incorporation into Si on dopant surface segregation during molecular-beam epitaxial growth. Low concentration of carbon can significantly reduce the surface segregation of boron and phosphorus. Combining the surface diffusion model with a two-state exchange...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics