Resonant tunneling in (110) oriented interband diodes

Zinck, J. J.; Chow, D. H.; Holabird, K. S.; Schulman, J. N.; Hall, K. C.; Boggess, T. F.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p073502
Academic Journal
Growth of high-quality Sb-based resonant tunneling diodes in the (110) orientation is demonstrated. The room-temperature current–voltage characteristics of the diodes are studied as a function of GaSb well width. Electronic band structure calculations including spin support the conclusion that the position of the GaSb light hole band with respect to the InAs conduction band is responsible for the strength of the negative differential resistance observed. The spin splitting of the heavy hole band is calculated to be larger than the light hole band suggesting that the observation of negative differential resistance may not be necessary or desirable for spin transport in these structures.


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