Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers

Damilano, B.; Barjon, J.; Duboz, J.-Y.; Massies, J.; Hierro, A.; Ulloa, J.-M.; Calleja, E.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071105
Academic Journal
The conjugated effect of growth temperature and in situ thermal annealing on the photoluminescence properties of In0.4Ga0.6As0.985N0.015/GaAs quantum wells (QWs) grown by molecular-beam epitaxy has been investigated. The interplay between growth temperature and annealing effects is such as the optimum growth temperature is not the same for as-grown and annealed samples. By using the combination of a low growth temperature and a high in situ annealing temperature, separate confinement heterostructure laser diodes with a single In0.4Ga0.6As1-xNx (x=0.015–0.021)/GaAs QW have been grown. The broad area devices emit from 1.34 to 1.44 μm at room temperature with a threshold current density of 1500–1755 A/cm2.


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