Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaN/GaN quantum well structures

Xu, S. J.; Wang, Y. J.; Li, Q.; Zhang, X. H.; Liu, W.; Chua, S. J.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071905
Academic Journal
Strongly enhanced lateral diffusion of photogenerated carriers was directly observed in the luminescent image of the InGaN/GaN quantum wells. Such an effect was quantitatively modeled using diffusion equation and the ambipolar diffusion coefficient derived by K. H. Gulden and his co-workers [Phys. Rev. Lett. 66, 373 (1991)]. Our simulation shows that the vertical piezoelectric field existing in strained InGaN/GaN quantum wells is the original “driving force” for the enhancement of lateral diffusion. Influence of the density of photogenerated carriers and their average mobility on the enhancement was discussed.


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