TITLE

Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaN/GaN quantum well structures

AUTHOR(S)
Xu, S. J.; Wang, Y. J.; Li, Q.; Zhang, X. H.; Liu, W.; Chua, S. J.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strongly enhanced lateral diffusion of photogenerated carriers was directly observed in the luminescent image of the InGaN/GaN quantum wells. Such an effect was quantitatively modeled using diffusion equation and the ambipolar diffusion coefficient derived by K. H. Gulden and his co-workers [Phys. Rev. Lett. 66, 373 (1991)]. Our simulation shows that the vertical piezoelectric field existing in strained InGaN/GaN quantum wells is the original “driving force” for the enhancement of lateral diffusion. Influence of the density of photogenerated carriers and their average mobility on the enhancement was discussed.
ACCESSION #
16581282

 

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