Ferromagnetic nanoclusters formed by Mn implantation in GaAs

Couto, O. D. D.; Brasil, M. J. S. P.; Iikawa, F.; Giles, C.; Adriano, C.; Bortoleto, J. R. R.; Pudenzi, M. A. A.; Gutierrez, H. R.; Danilov, I.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071906
Academic Journal
Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs sample were analyzed by x-ray and microscopic techniques. Our measurements indicate the presence of buried MnAs nanoclusters with a structural phase transition around 40 °C, in accord with the first-order magneto-structural phase transition of bulk MnAs. We discuss the structural behavior of these nanoclusters during their formation and phase transition, which is an important point for technological applications.


Related Articles

  • Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs. Zhao, L. X.; Staddon, C. R.; Wang, K. Y.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T. // Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071902 

    We report on measurements of the crystal structure and hole density in a series of as-grown and annealed GaMnAs samples. The measured hole densities are used to obtain the fraction of incorporated Mn atoms occupying interstitial and substitutional sites. This allows us to make a direct...

  • A convenient way of determining the ferromagnetic transition temperature of metallic (Ga,Mn)As. Jiang, C. P.; Zhao, J. H.; Deng, J. J.; Yang, F. H.; Niu, Z. C.; Wu, X. G.; Zheng, H. Z. // Journal of Applied Physics;3/15/2005, Vol. 97 Issue 6, p063908 

    We have studied magnetic and transport properties of insulating and metallic (Ga,Mn)As layers before and after annealing. A dramatic increase of the ferromagnetic transition temperature TC by postgrowth annealing has been realized in both insulating and metallic (Ga,Mn)As. The as-grown...

  • Thermal conversion of semi-insulating GaAs in high-temperature annealing. Ohkubo, N.; Shishikura, M.; Matsumoto, S. // Journal of Applied Physics;1/15/1993, Vol. 73 Issue 2, p615 

    Presents a study that discussed the high-temperature annealing of semi-insulating GaAs. Details on the thermal conversion induced by annealing at 1060-1200°Celsius; Effect of the generation of a native deep acceptor on thermal conversion; Information on the activation energy of carrier...

  • (Ga,Mn)As as a digital ferromagnetic heterostructure. Kawakami, R. K.; Johnston-Halperin, E.; Chen, L. F.; Hanson, M.; Guébels, N.; Speck, J. S.; Gossard, A. C.; Awschalom, D. D. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    (Ga,Mn)As digital ferromagnetic heterostructures are grown by incorporating submonolayer planes of MnAs into GaAs using molecular beam epitaxy. Structural and magnetic measurements indicate single-crystalline superlattice structure and ferromagnetic order with Curie temperatures (T[sub C]) up to...

  • Coherent magnetization precession in GaMnAs induced by ultrafast optical excitation. Qi, J.; Xu, Y.; Tolk, N. H.; Liu, X.; Furdyna, J. K.; Perakis, I. E. // Applied Physics Letters;9/10/2007, Vol. 91 Issue 11, p112506 

    The authors use femtosecond optical pulses to induce, control, and monitor magnetization precession in ferromagnetic Ga0.965Mn0.035As. At temperatures below ∼40 K, they observe coherent oscillations of the local Mn spins, triggered by an ultrafast photoinduced reorientation of the in-plane...

  • Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters. Iverson, R. B.; Reif, R. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p1675 

    Focuses on a study which presented a theoretical and experimental study of the recrystallization behavior of polycrystalling silicon films amorphized by self-implantation. Observations on crystallization behavior; Preparations of polycrystalline silicon films; Calculation of growth velocity;...

  • Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach. Pinacho, R.; Jaraiz, M.; Castrillo, P.; Martin-Bragado, I.; Rubio, J. E.; Barbolla, J. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252103 

    A comprehensive atomistic model for arsenic in silicon which includes charge effects and is consistent with first-principles calculations for arsenic-vacancy cluster energies has been developed. Emphasis has been put in reproducing the electrical deactivation and the annealed profiles in...

  • Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys. Merida, D.; García, J. A.; Sánchez-Alarcos, V.; Pérez-Landazábal, J. I.; Recarte, V.; Plazaola, F. // Applied Physics Letters;6/9/2014, Vol. 104 Issue 23, p1 

    Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched...

  • Influence of Al on the Microstructural Evolution and Mechanical Behavior of Low-Carbon, Manganese Transformation-Induced-Plasticity Steel. Dong-Woo Suh; Seong-Jun Park; Tae-Ho Lee; Chang-Seok Oh; Sung-Joon Kim // Metallurgical & Materials Transactions. Part A;Feb2010, Vol. 41 Issue 2, p397 

    Microstructural design with an Al addition is suggested for low-carbon, manganese transformation-induced-plasticity (Mn TRIP) steel for application in the continuous-annealing process. With an Al content of 1 mass pct, the competition between the recrystallization of the cold-rolled...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics