High-quality quantum point contacts in GaN/AlGaN heterostructures

Chou, H. T.; Lüscher, S.; Goldhaber-Gordon, D.; Manfra, M. J.; Sergent, A. M.; West, K. W.; Molnar, R. J.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p073108
Academic Journal
We study the transport properties of quantum point contacts in a GaN/AlGaN heterostructure. The conductance of our devices shows well-quantized plateaus, which spin-split in high perpendicular magnetic field. The g factor is 2.55, as derived from the point contact subband splitting versus perpendicular magnetic field. In addition to the well-resolved plateaus, we also observe evidence of “0.7 structure” which has been mainly investigated in the GaAs system.


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