TITLE

High-quality quantum point contacts in GaN/AlGaN heterostructures

AUTHOR(S)
Chou, H. T.; Lüscher, S.; Goldhaber-Gordon, D.; Manfra, M. J.; Sergent, A. M.; West, K. W.; Molnar, R. J.
PUB. DATE
February 2005
SOURCE
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p073108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study the transport properties of quantum point contacts in a GaN/AlGaN heterostructure. The conductance of our devices shows well-quantized plateaus, which spin-split in high perpendicular magnetic field. The g factor is 2.55, as derived from the point contact subband splitting versus perpendicular magnetic field. In addition to the well-resolved plateaus, we also observe evidence of “0.7 structure” which has been mainly investigated in the GaAs system.
ACCESSION #
16581275

 

Related Articles

  • Magnetic and structural properties of the Fe layers in CoO/Fe/Ag(001) heterostructure. Bali, Rantej; Soares, Márcio M.; Ramos, Aline Y.; Tolentino, Hélio C. N.; Yildiz, Fikret; Boudot, Clemence; Proux, Olivier; De Santis, Maurizio; Przybylski, Marek; Kirschner, Jürgen // Applied Physics Letters;3/26/2012, Vol. 100 Issue 13, p132403 

    The influence of interfacial oxidation on the magnetic behaviour of CoO covered Fe/Ag(001) is reported. Coverage with CoO causes the formation of a mixed Fe2O3-Fe3O4 interfacial oxide layer. The depth of the Fe-oxide varies with the thickness of pre-covered Fe and above 8 monolayers (MLs) of Fe...

  • Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection. Nan, Tianxiang; Yu Hui; Rinaldi, Matteo; Sun, Nian X. // Scientific Reports;6/14/2013, p1 

    High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS)...

  • Two-dimensional electrons at the n-GaAs/Al x Ga1− x As heterointerface under uniaxial compression. Kraak, W.; Savin, A.; Minina, N.; Il’evskiĭ, A.; Polyanskiĭ, A. // Journal of Experimental & Theoretical Physics;Nov2006, Vol. 103 Issue 5, p775 

    The transport characteristics and quantum oscillations of magnetoresistance have been studied in n-(001)GaAs/Al x Ga1− x As heterostructures at liquid helium temperatures and uniaxial compressions up to 3.5 kbar. Under such loading conditions, the density of two-dimensional (2D) electrons...

  • Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element. Kunets, Vasyl P.; Dobbert, Julia; Mazur, Yuriy I.; Salamo, Gregory J.; Müller, Uwe; Masselink, W. T.; Kostial, Helmar; Wiebicke, Evi // Journal of Materials Science: Materials in Electronics;Aug2008, Vol. 19 Issue 8/9, p776 

    Micro-Hall sensors with high sensitivity, low noise, and high thermal stability, 5 μm square, are fabricated using pseudomorphic Al0.3Ga0.7As/GaAs/In y Ga1- y As (0.2 ≤ y ≤ 0.3) heterostructures with Si-doped channels. The structures were optimized for thermal stability using a...

  • Superlattice in an interminiband resonance ac field. Litvinov, V. I.; Manasson, A. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p043505 

    We discuss the properties of miniband electrons in a superlattice illuminated by a strong electromagnetic field. If the ac field is in resonance with a two-miniband superlattice, gaps in the quasienergy spectrum appear. The gap is proportional to the Bessel function and oscillates with the ac...

  • Magnetic field induced rearrangement of the electric field domains in weakly coupled superlattices. Feu, W. H. M.; Elias, D. C.; Cury, L. A.; Guimarães, P. S. S.; Vieira, G. S.; Pires, M. P.; Landi, S. M.; Souza, P. L. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p487 

    We present an investigation of the electric field domain configuration in the sequential tunneling regime in weakly coupled superlattices in the presence of a magnetic field applied parallel to the quantum well layers. We show that, for an applied bias such that two electric field domains are...

  • Magnetoelectric effect in magnetostrictive/piezoelectric laminate composite Terfenol-D/LiNbO3 [(zxtw)-129°/30°]. Yang, P.; Zhao, K.; Yin, Y.; Wan, J. G.; Zhu, J. S. // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p172903 

    A magnetoelectric (ME) laminate composite consisting of a new cut type [(zxtw)-129°/30°] piezoelectric LiNbO3 single crystal and the magnetostrictive Tb1-xDyxFe2-y has been developed and its ME effect has been studied. Our small laminate shows a superior ME voltage coefficient (αE). A...

  • PUMPING EFFECT IN Y- AND Ψ-SHAPED CHANNELS WITH Π-SHAPED CORES. Denisov, S.; Dolgikh, V.; Khalilov, R.; Kolesnichenko, I.; Khripchenko, S. // Magnetohydrodynamics (0024-998X);Jan-Mar2012, Vol. 48 Issue 1, p197 

    The hydrodynamic characteristics of Y- and Ψ-shaped channel of the MHD pump are studied both experimentally and numerically. Calculation of magnetic and hydrodynamic fields in MHD channels is performed. The pressure drop -- flowrate characteristics of these fields are determined. The obtained...

  • Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaInP/GaAs structure. Kınacı, B.; Özen, Y.; Kızılkaya, K.; Asar, T.; Çetin, S.; Boyalı, E.; Öztürk, M.; Memmedli, T.; Özçelik, S. // Journal of Materials Science: Materials in Electronics;Apr2013, Vol. 24 Issue 4, p1375 

    The structural, optical and morphological properties of Ga-rich GaInP layers with various gallium compositions grown on epi-ready semi-insulating (100)-oriented GaAs substrates by using Molecular Beam Epitaxy technique are presented in this study. The GaInP/GaAs structures ( S1, S2 and S3) have...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics