On the crystalline structure, stoichiometry and band gap of InN thin films

Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Shan, W.; Ager, J. W.; Li, S. X.; Jones, R. E.; Haller, E. E.; Lu, Hai; Schaff, William J.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071910
Academic Journal
Detailed transmission electron microscopy, x-ray diffraction (XRD), and optical characterization of a variety of InN thin films grown by molecular-beam epitaxy under both optimized and nonoptimized conditions is reported. Optical characterization by absorption and photoluminescence confirms that the bandgap of single-crystalline and polycrystalline wurtzite InN is 0.70±0.05 eV. Films grown under optimized conditions with an AlN nucleation layer and a GaN buffer layer are stoichiometric, single-crystalline wurtzite structure with dislocation densities not exceeding mid-1010 cm-2. Nonoptimal films can be polycrystalline and display an XRD diffraction feature at 2θ≈33°; this feature has been attributed by others to the presence of metallic In clusters. Careful indexing of wide-angle XRD scans and selected area diffraction patterns shows that this peak is in fact due to the presence of polycrystalline InN grains; no evidence of metallic In clusters was found in any of the studied samples.


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