Local environment of ferromagnetically ordered Mn in epitaxial InMnAs

Chiu, P. T.; Wessels, B. W.; Keavney, D. J.; Freeland, J. W.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p072505
Academic Journal
The magnetic properties of the ferromagnetic semiconductor In0.98Mn0.02As were characterized by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. The Mn exhibits an atomic-like L2,3 absorption spectrum that indicates that the 3d states are highly localized. In addition, a large dichroism at the Mn L2,3 edge was observed from 5 to 300 K at an applied field of 2T. A calculated spectrum assuming atomic Mn2+ yields the best agreement with the experimental InMnAs spectrum. A comparison of the dichroism spectra of MnAs and InMnAs shows clear differences suggesting that the ferromagnetism observed in InMnAs is not due to hexagonal MnAs clusters. The temperature dependence of the dichroism indicates the presence of two ferromagnetic species, one with a transition temperature of 30 K and another with a transition temperature in excess of 300 K. The dichroism spectra are consistent with the assignment of the low temperature species to random substitutional Mn and the high temperature species to Mn near-neighbor pairs.


Related Articles

  • Magnetic properties of heavily Mn-doped quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InP. Ohya, Shinobu; Kobayashi, Hideo; Tanaka, Masaaki // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2175 

    We have studied magnetic properties of heavily Mn-doped [(In[sub 0.44]Ga[sub 0.56])[sub 0.79]Mn[sub 0.21]]As thin films grown by low-temperature molecular-beam epitaxy on InP substrates. (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 °C. When...

  • Efficient laser operation of diode-pumped Pr,Mg:SrAlO. Marzahl, Daniel-Timo; Reichert, Fabian; Metz, Philip; Fechner, Matthias; Hansen, Nils-Owe; Huber, Günter // Applied Physics B: Lasers & Optics;Jul2014, Vol. 116 Issue 1, p109 

    We report on diode-pumped laser operation of Pr,Mg:SrAlO at lasing wavelengths of λ = 724.4 nm, λ = 643.5 nm, and λ = 622.8 nm. Furthermore, the laser threshold could be reached in the green spectral range. By pumping the crystal longitudinally from each side with two polarization beam...

  • Terahertz dynamics of photogenerated carriers in ferromagnetic InGaMnAs. Khodaparast, G. A.; Larrabee, D. C.; Kono, J.; King, D. S.; Kato, J.; Slupinski, T.; Oiwa, A.; Munekata, H.; Sanders, G. D.; Stanton, C. J. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p8286 

    We have measured the picosecond transient carrier response of InGaMnAs/InP by two-color pump-probe spectroscopy, using an intense near-infrared beam as the pump and a 52.5 μm (5.7 THz) beam as the probe. We observed strongly nonexponential decays, especially at high pump fluences and low...

  • Characterization of embedded MgO/ferromagnet contacts for spin injection in silicon. Uhrmann, T.; Dimopoulos, T.; Brückl, H.; Lazarov, V. K.; Kohn, A.; Paschen, U.; Weyers, S.; Bär, L.; Rührig, M. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 6, p063709 

    In this work we present the structural and electrical characterization of sputter-deposited CoFe(B)/MgO/Si metal-insulator-semiconductor tunneling junctions for injection and detection of spin polarized current in silicon. The multilayers have been deposited in 700 nm deep trenches, patterned in...

  • Ferromagnetic behavior of CdMnCrTe quaternary system. Shen, S.; Liu, X.; Cho, Y. J.; Furdyna, J. K.; Dobrowolska, M.; Hwang, Y. H.; Um, Y. H. // Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p142507 

    We describe magneto-optical and magnetic properties of quaternary Cd1-x-yMnxCryTe crystals (x=0.37, 0≤y≤0.03) grown by the Bridgman method. The presence of Cr in this alloy is observed to induce ferromagnetic behavior and to enhance magneto-optical effects. Using magnetic circular...

  • Multiferroic BiMnO3 thin films with double SrTiO3 buffer layers. J. Y. Son; Shin, Y.-H. // Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062902 

    High quality BiMnO3 thin films with double SrTiO3 buffer layers were fabricated on Pt/Ti/SiO2/Si and SrTiO3 substrates, in which SrTiO3 buffer layers were used to reduce leakage current in BiMnO3 thin films. The SrTiO3 buffer layers had a thickness of about 5 nm obtained from the fitting of...

  • InSb codoped with Mn and Zn: A new ferromagnetic semiconductor. Sanygin, V.; Pashkova, O.; Filatov, A.; Izotov, A. // Inorganic Materials;Sep2011, Vol. 47 Issue 9, p931 

    We have studied the magnetic properties of InMnSb substitutional solid solutions. The results indicate that, at Mn contents below 0.5 at %, the materials contain microinclusions close in composition to the ferrimagnetic compound MnSb, which has a layered structure with magnetically active...

  • Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base. Shen, C.; Wang, L. G.; Zheng, H. Z.; Zhu, H.; Chen, L.; Zhao, J. H. // Journal of Applied Physics;May2011, Vol. 109 Issue 9, p093507 

    A type of manganese impurity center with two holes bound in it is disclosed in a lightly Mn-doped base layer of an n-i-p-i-n heterostructure. In addition to the intensively investigated (e, AMn0) peak, a photoluminescence (PL) peak appears at 820.3 nm under zero bias and is continuously shifted...

  • Crystallization of (Th1-xUx)3As4 ferromagnetic semiconductor from the Ga flux. WIŚNIEWSKI, P.; HENKIE, Z.; PIETRASZKO, A. // Materials Science (0137-1339);2008, Vol. 26 Issue 4, p933 

    Crystals of n- or p-type heavily doped ferromagnetic semiconductor (Th1-xUx)3As4 (χ= 0.67 and 0.80) were grown using a mineralization process in the Ga flux. An excess of As corresponding to MeAs2 composition was necessary to grow the Me3As4 phase at temperature cycled between 1000 °C and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics