Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Zhang, Baijun; Egawa, Takashi; Ishikawa, Hiroyasu; Liu, Yang; Jimbo, Takashi
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071113
Academic Journal
Crack-free thin-film InGaN multiple-quantum-well light-emitting diodes (LEDs) were successfully transferred from the original Si (111) substrate onto copper carrier by means of metal-to-metal bonding and the selective lift-off (SLO) technique using wet-chemical etching. Crystalline quality was investigated by x-ray diffraction and photoluminescence measurements. No deterioration was found in the thin film after substrate removal due to the fact that the SLO technique minimizes the residual strain relaxation. Substrate removal eliminates not only the substrate absorption but also the large band offset between the AlN buffer layer and substrate. In conjunction with inserting a metal reflector between the LED structure and the copper carrier, the performances of the LED fabricated on the substrate removal region were significantly improved. The operating voltage at 20 mA and the series resistance was 3.6 V and 27 Ω, respectively. The optical power revealed an increase of 49% compared to the LED before substrate removal.


Related Articles

  • AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO films. Smirnova, I.; Markov, L.; Pavlyuchenko, A.; Kukushkin, M. // Semiconductors;Mar2012, Vol. 46 Issue 3, p369 

    A method for obtaining transparent conductive ITO (indium-tin oxide) films aimed for use in light emitting diodes of the blue spectral range is developed. The peak external quantum efficiency of light-emitting diodes with a p-contact based on the obtained films reaches 25%, while for similar...

  • Improving organic light-emitting devices by modifying indium tin oxide anode with an ultrathin tetrahedral amorphous carbon film. Chen, B. J.; Sun, X. W.; Divayana, Y.; Tay, B. K. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p046107 

    The characteristics of organic light-emitting devices based on tris-(8-hydroxyqunoline) aluminum with an ultrathin tetrahedral amorphous carbon (ta-C) film on indium tin oxide have been investigated. The device with a 1.0-nm ta-C layer has the highest current and power efficiency. The current...

  • Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes. Hirayama, Hideki // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p091101 

    In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from wide-band-gap (In)AlGaN. The use of the In-segregation effect, which has already been used for InGaN...

  • Red light-emitting diodes based on InP/GaP quantum dots. Hatami, F.; Lordi, V.; Harris, J. S.; Kostial, H.; Masselink, W. T. // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p096106 

    The growth, fabrication, and device characterization of InP quantum-dot light-emitting diodes based on GaP are described and discussed. The diode structures are grown on gallium phosphide substrates using gas-source molecular-beam epitaxy and the active region of the diode consists of...

  • Highly oriented indium tin oxide films for high efficiency organic light-emitting diodes. Kim, H.; Horwitz, J. S.; Kim, W. H.; Kafafi, Z. H.; Chrisey, D. B. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5371 

    Highly oriented indium tin oxide (ITO) thin films were grown by pulsed-laser deposition (PLD) on glass and single-crystal yttria-stabilized zirconia (YSZ) substrates. The structural, electrical, and optical properties of these films were investigated as a function of oxygen partial pressure....

  • Spectral conversion of InGaN ultraviolet microarray light-emitting diodes using fluorene-based red-, green-, blue-, and white-light-emitting polymer overlayer films. Heliotis, G.; Stavrinou, P. N.; Bradley, D. D. C.; Gu, E.; Griffin, C.; Jeon, C. W.; Dawson, M. D. // Applied Physics Letters;9/5/2005, Vol. 87 Issue 10, p103505 

    We report the fabrication of hybrid organic/inorganic semiconductor light-emitting devices that operate across the entire visible spectrum. The devices are based on a series of blue-, green-, and red-light-emitting polyfluorene materials that convert the emission from an array of micron-sized...

  • Controlling bulk aggregation state in semiconducting conjugated polymer solution. Chi-Chung Hua; Chih-Yuan Kuo; Show-An Chen // Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123303 

    Dynamic light scattering measurements disclosed the ubiquity of large aggregate species (i.e., generally above 100 nm in hydrodynamic radius) in the precursor solutions customarily used to fabricate polymer-based light-emitting diodes (PLEDs). Transformation of these species into nanoscale thin...

  • Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them. Tsatsulnikov, A.; Lundin, W.; Zavarin, E.; Nikolaev, A.; Sakharov, A.; Sizov, V.; Usov, S.; Musikhin, Yu.; Gerthsen, D. // Semiconductors;Feb2011, Vol. 45 Issue 2, p271 

    Results of studies of hydrogen addition during the growth of thin (∼2-3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is shown that, with the known effect of a...

  • Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates. Liu, B.; Zhang, R.; Xie, Z. L.; Liu, C. X.; Kong, J. Y.; Yao, J.; Liu, Q. J.; Zhang, Z.; Fu, D. Y.; Xiu, X. Q.; Lu, H.; Chen, P.; Han, P.; Gu, S. L.; Shi, Y.; Zheng, Y. D.; Zhou, J.; Zhou, S. M. // Applied Physics Letters;12/17/2007, Vol. 91 Issue 25, p253506 

    The nonpolar m-plane (1100) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 μW under a direct current of 20 mA for a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics