Effects of capping on the Ga1-xMnxAs magnetic depth profile

Kirby, B. J.; Borchers, J. A.; Rhyne, J. J.; O'Donovan, K. V.; Wojtowicz, T.; Liu, X.; Ge, Z.; Shen, S.; Furdyna, J. K.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p072506
Academic Journal
Annealing can increase the Curie temperature and net magnetization in uncapped Ga1-xMnxAs films, effects that are suppressed when the films are capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped Ga1-xMnxAs revealed a pronounced magnetization gradient that was reduced after annealing. We have extended this study to Ga1-xMnxAs capped with GaAs. We observe no increase in Curie temperature or net magnetization upon annealing. Furthermore, PNR measurements indicate that annealing produces minimal differences in the depth-dependent magnetization, as both as-grown and annealed films feature a significant magnetization gradient. These results suggest that the GaAs cap inhibits redistribution of interstitial Mn impurities during annealing.


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