Copper nanopattern on SiO2 from sputter etching a Cu/SiO2 interface

Stepanova, M.; Dew, S. K.; Soshnikov, I. P.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p073112
Academic Journal
We have observed a Cu nanostructure self-assembled on a SiO2 substrate during ion beam etching the Cu/SiO2 interface. We have deposited a thin Cu layer on a glass substrate and etched the deposited layer by a neutralized argon ion beam. At the stage when almost all metal is removed by etching, we have observed an ∼20-nm-sized Cu pattern on the substrate. By atomistic Monte Carlo simulations we have demonstrated that during sputter etching, a morphology self-organizes on the surface of the Cu layer whose size and shape matches the observed Cu nanostructure. We conclude that the observed Cu nanopattern on the substrate results from the surface morphology developed by sputter instability during etching of the deposited layer.


Related Articles

  • Molecular dynamics study on Ar ion bombardment effects in amorphous SiO2 deposition processes. Taguchi, Masafumi; Hamaguchi, Satoshi // Journal of Applied Physics;12/15/2006, Vol. 100 Issue 12, p123305 

    Argon ion bombardment effects on growing amorphous SiO2 films during reactive sputtering deposition processes were examined based on molecular dynamics (MD) and Monte Carlo (MC) simulation techniques. The system we have considered here is a film that is subject to energetic Ar bombardment while...

  • Monte Carlo simulation of gas diffusion in regular and randomized pore systems. Burganos, Vasilis N. // Journal of Chemical Physics;2/1/1993, Vol. 98 Issue 3, p2268 

    The rate of rarefied gas transport in clusters of hollow spheres and cylinders is determined using Monte Carlo simulation methods. The spheres and the cylinders, representing large pore bodies and narrow pore throats in actual porous materials, are either placed at the nodes and the branches,...

  • Rheology of model confined ultrathin fluid films. I. Statistical mechanics of the surface force... Bordarier, Philippe; Rousseau, Bernard; Fuchs, Alain H. // Journal of Chemical Physics;5/1/1997, Vol. 106 Issue 17, p7295 

    Part I. Studies the behavior of confined ultrathin films of a simple model system in which the fluid and wall particles were modeled as Lennard-Jones rare gas atoms by Monte Carlo simulations. Statistical thermodynamics of the model Surface Force Apparatus (SFA) experiments; Monte Carlo...

  • Molecular simulation of the phase behaviour of noble gases using accurate two-body and three... Marcelli, Gianluca; Sadus, Richard J. // Journal of Chemical Physics;7/22/1999, Vol. 111 Issue 4, p1533 

    Describes Gibbs ensemble Monte Carlo simulations for the vapor-liquid phase coexistence of noble gases argon, krypton and xenon. Intermolecular potentials; Results of the Gibbs ensemble simulations; Axilrod-Teller term's representation of three-body dispersion interactions.

  • Monte Carlo simulations of the adsorption of rare gases at high pressures. Vermesse, J.; Levesque, D. // Journal of Chemical Physics;11/15/1994, Vol. 101 Issue 10, p9063 

    The excess surface adsorption of rare gases on the surface of a graphite crystal is calculated, at room temperature, by numerical simulations for thermodynamic states of densities covering the full domain of their fluid phases. A comparison with the measured excess surface adsorption on active...

  • Monte Carlo simulation of ion transport through rf glow-discharge sheaths. Thompson, Brian E.; Sawin, Herbert H.; Fisher, Donald A. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2241 

    Presents a study which simulated the transport of ions through rf glow-discharge sheaths with Monte Carlo method to determine the distributions of ion-bombardment energy and angle of impact. Effects of sheath parameters; Description of ion-neutral scattering; Effect of spatially nonuniform...

  • Monte Carlo simulation of channeling tails formation under heavy-dose ion bombardment. Mazzone, A. M. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2337 

    Presents a Monte Carlo simulation of the ion distribution and damage growth in phosphorous-implanted silicon. Assumptions of the theories on amorphization; Reasons for the discrepancies in theoretical and experimental results of ion distribution; Consequence of the kinetic energy transfer from...

  • Laser induced impact ionization in semiconductors: A Monte Carlo study for silicon. Kochman, Boaz; Yeom, Keesoo // Applied Physics Letters;4/1/1996, Vol. 68 Issue 14, p1936 

    Examines the laser-induced impact ionization breakdown in silicon with the use of Monte Carlo computer simulations. Use of super-soft model for the breakdown problem in laser field; Calculation of the impact ionization coefficient with the use of Cartier model; Effect of the field frequency on...

  • Ion-bombardment-enhanced etching of LiNbO3 using damage profile tailoring. Ashby, C. I. H.; Arnold, G. W.; Brannon, P. J. // Journal of Applied Physics;1/1/1989, Vol. 65 Issue 1, p93 

    Focuses on an approach to ion-bombardment-enhanced etching of lithium niobate based on damage-profile tailoring through the use of multienergy implants. Occurrence of buried microcracks in heavily implanted Z-cut samples; Techniques used to mask the samples prior to ion implantation; Use of a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics