Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides

Dimitropoulos, D.; Jhaveri, R.; Claps, R.; Woo, J. C. S.; Jalali, B.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071115
Academic Journal
The lifetime of photogenerated carriers in silicon-on-insulator rib waveguides is studied in connection with the optical loss they produce via nonlinear absorption. We present an analytical model as well as two-dimensional numerical simulation of carrier transport to elucidate the dependence of the carrier density on the geometrical features of the waveguide. The results suggest that effective carrier lifetimes of ≤1 ns can be obtained in submicron waveguides resulting in negligible nonlinear absorption. It is also shown that the lifetime and, hence, carrier density can be further reduced by application of a reverse bias pn junction.


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