Modification of GaAs Schottky diodes by thin organic interlayers

Vearey-Roberts, A. R.; Evans, D. A.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p072105
Academic Journal
Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The current–voltage (I–V) characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n<1.3). Unlike other organic interlayers in similar device structures, SnPc reduces the effective barrier height by influencing the space charge region of the GaAs. The change in barrier height deduced from the I–V characteristics [(0.26±0.02) V] is similar to the band-bending measured using core-level photoelectron spectroscopy for SnPc growth on the S-passivated n-GaAs(001) surface [(0.22±0.04) eV] and is much larger than previously reported for other similar systems.


Related Articles

  • Characterization of Schottky barrier diodes by means of modulation technique. Kunze, U.; Kowalsky, W. // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1597 

    Presents a study which characterized Schottky barrier diodes with the use of modulation technique. Diode parameter equations; Model calculation; Practical performance.

  • Analysis of GaAs Schottky/tunnel metal–insulator–semiconductor diode characteristics based on an interfacial layer model. Ikoma, Hideaki; Ishida, Toshiki; Sato, Kenji; Ishikawa, Toshifumi; Maeda, Keiji // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1272 

    Presents information on a study which investigated the current-voltage characteristics of gallium arsenic Schottky and tunnel metal-insulator-semiconductor diodes. Experimental procedures; Discussion; Conclusion.

  • A 1.485-Gbit/s Video Signal Transmission System at Carrier Frequencies of 240 GHz and 300 GHz. Tae Jin Chung; Won-Hui Lee // ETRI Journal;Dec2011, Vol. 33 Issue 6, p965 

    A 1.485-Gbit/s video signal transmission system at carrier frequencies of 240 GHz and 300 GHz was implemented and demonstrated. The radio frequency front-ends are composed of Schottky barrier diode subharmonic mixers (SHMs), frequency triplers, and diagonal horn antennas for the transmitter and...

  • Thermal-resistant TiB x - n-GaP Schottky diodes. Belyaev, A.; Boltovets, N.; Ivanov, V.; Kamalov, A.; Kapitanchuk, L.; Konakova, R.; Kudryk, Ya.; Lytvyn, O.; Milenin, V.; Nasyrov, M. // Semiconductors;Apr2008, Vol. 42 Issue 4, p453 

    The effect of rapid thermal annealing on the parameters of TiB x - n-GaP Schottky barriers and interphase interactions at the TiB x -GaP interface are studied. It is shown that the contact TiB x - n-GaP system features an increased thermal stability without varying the electrical parameters of...

  • Researchers make Schottky discovery.  // Electronics Weekly;6/25/2003, Issue 2105, p12 

    Reports on the discovery of an interference phase in Schottky barriers at the Oak Ridge National Laboratory in Oak Ridge, Tennessee. Statement from the laboratory on the Schottky barrier; Method used in studying the interface between silicon and silicon dioxide; Remarks from Doctor Rodney McKee...

  • Analysis of the actual schottky-barrier contact model in a wide temperature and bias-voltage range. Boshkov, V. G.; Ziatzev, S. E. // Radiophysics & Quantum Electronics;Sep2004, Vol. 47 Issue 9, p688 

    We numerically study the model of an actual metal-semiconductor Schottky-barrier contact with an interfacial layer and surface states (the Bardeen model). Our study is based on the previously developed view that the anomalies of the characteristics of such a contact is a consequence of the...

  • A NEW SCHEME FOR THE DESIGN OF BALANCED FREQUENCY TRIPLER WITH SCHOTTKY DIODES. Jian Guo; Jie Xu; Cheng Qian // Progress in Electromagnetics Research;2013, Vol. 137, p407 

    We propose a balanced frequency tripler scheme for millimeter-wave and submillimeter-wave application, in which double-sided suspended stripline is adopted. Two arms of Schottky diodes are mounted on the upper side of the substrate, and the other two arms of diodes are mounted on the lower side....

  • Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO. Mosbacker, H. L.; Strzhemechny, Y. M.; White, B. D.; Smith, P. E.; Look, D. C.; Reynolds, D. C.; Litton, C. W.; Brillson, L. J. // Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p012102 

    A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen plasma treatment. This transition is accompanied by reduction of the “green” deep level cathodoluminescence emission,...

  • Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes. Sarpatwari, K.; Awadelkarim, O. O.; Allen, M. W.; Durbin, S. M.; Mohney, S. E. // Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242110 

    A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A*) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics