Stable charge storage in granular thin films

Xu, Fengting T.; Thaler, Sean M.; Lopez, Carlos A.; Barnard, John A.; Butera, Alejandro; Weston, James L.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p074105
Academic Journal
Highly stable local charge storage by scanning probe microscopy methods has been observed in Fe–SiO2 (and Co–SiO2) granular thin films (5 nm metal granules embedded in SiO2) with decay times as much as two orders of magnitude longer than previously reported for heterogeneous films. Charge dissipation is well described as occurring in two regimes, a comparatively fast regime at short times (decay times of thousands of seconds) and a much slower regime at longer times (decay times of tens of thousands of seconds). Negative charging occurs more readily in these systems but positive charges are significantly more stable. Based on the results presented here, granular thin films have great potential as a new class of stable, tunable electrets suitable for nanoscale charge patterning and electrostatically directed assembly of complex nanostructures from discrete charged/polarized nanoparticles and macromolecules.


Related Articles

  • Two mechanisms of crater formation in ultraviolet-pulsed-laser irradiated SiO2 thin films with artificial defects. Papernov, S.; Schmid, A. W. // Journal of Applied Physics;6/1/2005, Vol. 97 Issue 11, p114906 

    Atomic force microscopy was employed to investigate the morphology of ultraviolet nanosecond-pulsed-laser damage in SiO2 thin films. Gold nanoparticles, 18.5-nm diameter, embedded in the film were used as calibrated absorbing defects. Damage-crater diameter, depth, and cross-sectional profiles...

  • Synthetic melanin thin films: Structural and electrical properties. da Silva, M.I.N.; Dezidério, S.N.; Gonzalez, J.C.; Graeff, C.F.O.; Cotta, M.A. // Journal of Applied Physics;11/15/2004, Vol. 96 Issue 10, p5803 

    Scanning probe microscopy was used to investigate the structural and electrical organization at the nanoscopic level of hydrated melanin thin films synthesized by oxidizing L-3-(3,4-dihydroxyphenyl)-alanine (L-dopa) in dimethyl sulfoxide. Atomic force microscopy (AFM) provided the morphologies...

  • Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures. Pletea, M.; Brückner, W.; Wendrock, H.; Kaltofen, R. // Journal of Applied Physics;3/1/2005, Vol. 97 Issue 5, p054908 

    The stress evolution during and after dc magnetron sputter deposition of Cu thin films with thicknesses of 20 and 300 nm and deposited with a constant rate of 0.1 nm/s onto Si (100) substrates is studied for various sputtering pressures (0.05–6 Pa). The stress was determined by means of...

  • Scanning optical probe microscopy with submicrometer resolution using an organic photodetector. An, Kwang H.; O&'Connor, Brendan; Pipe, Kevin P.; Yiying Zhao; Shtein, Max // Applied Physics Letters;7/21/2008, Vol. 93 Issue 3, p033311 

    A high-resolution scanning optical microscopy technique is demonstrated, in which an organic photodetector on a silicon-based scanning probe cantilever scans a sample, simultaneously recording optical and topographic data with submicrometer resolution, while showing no measurable degradation...

  • Correlation of the resistive switching and polarization switching in zinc oxide thin films using scanning probe microscopy techniques. Xiao, Juanxiu; Zeng, Kaiyang; Wong, Lai-Mun; Wang, Shijie // Journal of Materials Research;Nov2015, Vol. 30 Issue 22, p3431 

    In this study, resistive switching (RS), polarization switching, and charge distribution under DC bias in undoped ZnO thin films are studied by applying scanning probe microscopy (SPM) techniques on the same location. The techniques include Piezoresponce Force Microscopy, Kelvin Probe Force...

  • Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface. Carlotti, J. -F.; Touboul, A. D.; Ramonda, M.; Caussanel, M.; Guasch, C.; Bonnet, J.; Gasiot, J. // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p041906 

    Thin silicon oxide layers on silicon substrates are investigated by scanning probe microscopy before and after irradiation with 210 MeV Au+ ions. After irradiation and complete chemical etching of the silicon oxide layer, silicon bumps grown on the silicon surface are observed. It is shown that...

  • Surface observation of LaNiO3/MgO (100) structure. Kim, B. H.; An, J. H.; Hwang, K. S. // Journal of Materials Science;Apr2006, Vol. 41 Issue 7, p2165 

    The article reports on an atomic force microscope (AFM) study on the polycrystalline LaNiO3 thin films on MgO substrate, with particular interest being paid to the influence of substrate on the surface morphology and roughness. The authors obtained a graphical impression of the surface...

  • Dynamic superlubricity and the elimination of wear on the nanoscale. Lantz, Mark A.; Wiesmann, Dorothea; Gotsmann, Bernd // Nature Nanotechnology;Sep2009, Vol. 4 Issue 9, p586 

    One approach to ultrahigh-density data storage involves the use of arrays of atomic force microscope probes to read and write data on a thin polymer film, but damage to the ultrasharp silicon probe tips caused by mechanical wear has proved problematic. Here, we demonstrate the effective...

  • Refractive-index tailoring and morphological evolutions in Gd2O3–SiO2 and ZrO2–SiO2 composite thin films. Sahoo, N. K.; Thakur, S.; Tokas, R. B.; Kamble, N. M. // Applied Physics A: Materials Science & Processing;Nov2007, Vol. 89 Issue 3, p711 

    Refractive-index tailoring and morphological evolutions in two different thin film composite systems of gadolinia–silica (Gd2O3:SiO2) and zirconia–silica (ZrO2:SiO2) deposited through reactive electron-beam codeposition processes are discussed in this research paper. For Gd2O3:SiO2...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics