Photoinduced resistivity changes in Bi0.4Ca0.6MnO3 thin films

Smolyaninova, V. N.; Rajeswari, M.; Kennedy, R.; Overby, M.; Lofland, S. E.; Chen, L. Z.; Greene, R. L.
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071922
Academic Journal
We report charge-ordered Bi0.4Ca0.6MnO3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4Ca0.6MnO3 make them very promising for photonic device application.


Related Articles

  • Pockels response in calcium barium niobate thin films. Helsten, R.; Razzari, L.; Ferrera, M.; Ndione, P. F.; Gaidi, M.; Durand, C.; Chaker, M.; Morandotti, R. // Applied Physics Letters;12/24/2007, Vol. 91 Issue 26, p261101 

    The electro-optical response of calcium barium niobate ferroelectric thin films is characterized using a single beam setup in reflection geometry. Clear evidence of a Pockels response together with an r33 coefficient as high as 130 pm/V is found. This large value and the high Curie temperature...

  • Enhancement of weak anti-localization signatures in the magneto-resistance of bismuth anti-dot thin films. Rabin, O.; Nielsch, K.; Dresselhaus, M. S. // Applied Physics A: Materials Science & Processing;Mar2006, Vol. 82 Issue 3, p471 

    Anti-dot array thin films of bismuth were prepared by the e-beam deposition of this semi-metal on nano-porous substrates. The magneto-resistance measurements of bismuth thin films deposited under identical conditions on various substrates displayed signatures from both classical...

  • Electrodeposition of bismuth thin films on n-GaAs (110). Vereecken, Philippe M.; Rodbell, Kenneth; Ji, Chunxin; Searson, Peter C. // Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p121916 

    Bismuth thin films are formed electrochemically on n-GaAs (110). Bismuth films up to a few hundred nanometers in thickness exhibit a strong (018) texture, while thicker films are polycrystalline. The barrier height of the n-GaAs/Bi Schottky contacts is 0.62 eV, about 0.2 eV lower than for...

  • Atomically-thin crystalline films and ribbons of bismuth telluride. Teweldebrhan, Desalegne; Goyal, Vivek; Rahman, Muhammad; Balandin, Alexander A. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053107 

    The authors report on “graphene-like” exfoliation of the large-area crystalline films and ribbons of bismuth telluride with the thicknesses of a few atoms. It is demonstrated that Bi2Te3 crystal can be mechanically separated into its building...

  • Structural changes in chemical solution deposited lanthanum doped bismuth ferrite thin films. Singh, V. R.; Garg, A.; Agrawal, D. C. // Applied Physics Letters;4/14/2008, Vol. 92 Issue 15, p152905 

    Here, we report on the lanthanum (La) doping induced structural changes in chemical solution grown Bi1-xLaxFeO3 (0.0≤x≥0.30) thin films on indium tin oxide coated glass substrates and influence on film’s properties. Films show gradual structural changes from rhombohedral...

  • The effect of substrate heating on the tunability of rf-sputtered Bi2O3-ZnO-Nb2O5 thin films. Ha, S.; Lee, Y.S.; Hong, Y.P.; Lee, H.Y.; Lee, Y.C.; Ko, K.H.; Kim, D.-W.; Hong, H.B.; Hong, K.S. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 3, p585 

    Reactively rf-sputtered Bi2O3-ZnO-Nb2O5 (BZN) thin films were prepared on Pt(111)/TiO2/SiO2/Si with substrate heating. The effects of substrate heating on the structures, morphologies, dielectric properties, and voltage-tunable dielectric properties of the films were investigated. With heating,...

  • GADOLINIUM AND MOLYBDENUM OXIDES DEPOSITION PARAMETERS ANALYSIS BY REACTIVE PULSE MAGNETRON SPUTTERING. Iljinas, Aleksandras; Adomonis, Vytautas // International Conference: Radiation Interaction with Material & ;2012, p141 

    There is a great interest in bismuth oxide polymorph with cubic crystal structure (δ-Bi2O3) due to its high oxide ion mobility arising from numerous oxygen vacancies and therefore higher ionic conductivity comparing to the conventional ionic electrolytes. Gd2O3 and Mo2O3 are metal oxide...

  • Electric-pulse-induced reflectance change in the thin film of perovskite manganite. Aoyama, K.; Waku, K.; Asanuma, A.; Uesu, Y.; Katsufuji, T. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1208 

    We demonstrate a nonvolatile, reversible change of infrared reflectance from the thin film of perovskite manganite (Pr1-xCaxMnO3) by applying electric pulse. The result provides a possibility to use the electric-pulse-induced phenomena of this compound in optical devices.

  • Universal behavior of giant electroresistance in epitaxial La0.67Ca0.33MnO3 thin films. Zhao, Y. G.; Wang, Y. H.; Zhang, G. M.; Zhang, B.; Zhang, X. P.; Yang, C. X.; Lang, P. L.; Zhu, M. H.; Guan, P. C. // Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p122502 

    We report a giant resistance drop induced by dc electrical currents in La0.67Ca0.33MnO3 epitaxial thin films. Resistance of the patterned thin films decreases exponentially with increasing current and a maximum drop shows at the temperature of resistance peak Tp. Variation of resistance with...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics