Bending experiment on pentacene field-effect transistors on plastic films

Sekitani, Tsuyoshi; Kato, Yusaku; Iba, Shingo; Shinaoka, Hiroshi; Someya, Takao; Sakurai, Takayasu; Takagi, Shinichi
February 2005
Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p073511
Academic Journal
We have fabricated very flexible pentacene field-effect transistors with polyimide gate dielectric layers on plastic films with a mobility of 0.3 cm2/V s and an on/off ratio of 105, and have measured their electrical properties under various compressive and tensile strains while changing the bending radius of the base plastic films systematically. We have found that the change in source-drain current with bending radius is reproducible and reversible when the bending radius is above 4.6 mm, which corresponds to strains of ∼1.4±0.1%. Furthermore, the change in source-drain current does not depend on the direction of strain versus direction of current flow.


Related Articles

  • Operational and environmental stability of pentacene thin-film transistors. Kagan, C. R.; Afzali, A.; Graham, T. O. // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p193505 

    We report the effects of repeated stressing and environmental exposure on the operational stability of pentacene thin-film transistors (TFTs). Pentacene TFT channels were deposited by thermal evaporation and by spin coating and thermally converting soluble precursors. For a given dielectric...

  • Degradation of organic field-effect transistors made of pentacene. Pannemann, Ch.; Diekmann, T.; Hilleringmann, U. // Journal of Materials Research;Jul2004, Vol. 19 Issue 7, p1999 

    This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature...

  • High mobility of pentacene field-effect transistors with polyimide gate dielectric layers. Kato, Yusaku; Shingo Iba; Teramoto, Ryohei; Sekitano, Tsuyoshi; Someya, Takao; Kawaguchi, Hiroshi; Sakurai, Takayasu // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3789 

    Polyimide gate dielectric layers cured at 180 °C have been employed to fabricate high-quality pentacene field-effect transistors on polyethylenenaphthalate-based films. The surface roughness (root-mean square) of gate dielectric layers characterized by atomic force microscopy is only 0.2 nm,...

  • Effects of annealing on pentacene field-effect transistors using polyimide gate dielectric layers. Sekitani, Tsuyoshi; Someya, Takao; Sakurai, Takayasu // Journal of Applied Physics;7/15/2006, Vol. 100 Issue 2, p024513 

    We report systematic studies on the effects of annealing on pentacene field-effect transistors (FETs). The FETs are fabricated on plastic films with polyimide gate dielectric layers, encapsulated with poly-chloro-para-xylylene (parylene) passivation layers, and annealed in a nitrogen environment...

  • A nonvolatile memory element based on an organic field-effect transistor. Unni, K. N. Narayanan; de Bettignies, Remi; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1823 

    Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to...

  • Comparative study of the photoresponse from tetracene-based and pentacene-based thin-film transistors. Choi, Jeong-M.; Jiyoul Lee; Hwang, D. K.; Jae Hoon Kim; Seongil Im; Kim, Eugene // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p043508 

    We report on the photoresponse from tetracene-based and pentacene-based thin-film transistors (TFTs) with semitransparent NiOx source/drain electrodes and SiO2/p+-Si substrate. Both organic TFTs have been fabricated with identical channel thickness and device geometry. Compared with...

  • Pentacene field-effect transistors with sub-10-nm channel lengths. Liang Wang; Fine, Daniel; Taeho Jung; Basu, Debarshi; von Seggern, Heinz; Dodabalapur, Ananth // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1772 

    The field effect in pentacene thin-film transistors was studied using bottom-contact devices with channel lengths below 10 nm. To suppress spreading current in these devices, which have a small channel width-to-length (W-L) ratio, we employed a pair of guarding electrodes as close as 20 nm to...

  • Organic field-effect transistors with single and double pentacene layers. Suyong Jung; Zhen Yao // Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p083505 

    We report the characterization of field-effect transistors fabricated within individual grains of single and double pentacene layers grown on silicon oxide. Field-effect mobilities are found to increase with increasing gate voltage and exhibit a thermally activated form for the temperature...

  • Modification of the electric conduction at the pentacene/SiO2 interface by surface termination of SiO2. Yagi, Iwao; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103502 

    A surface treatment method has been developed for the SiO2/Si substrate to control the electrical properties of pentacene thin-film transistors (TFTs). The surface treatment is performed by spin-coating 1,1,1,3,3,3-hexamethyldisilazane liquid, resulting in a drastic improvement of the off...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics